Temperature Condition of Car Exhaust System at Low Ambient Temperatures von Boyarshinov, M. G., Kuznetsov, N. I.

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Structural and electrical properties of Schottky barriers on n-GaN von Kalinina, E.V., Kuznetsov, N.I., Babanin, A.I., Dmitriev, V.A., Shchukarev, A.V.

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Electrical characteristics of GaN/6H-SiC n-p heterojunctions von Kuznetsov, N.I., Gubenco, A.E., Nikolaev, A.E., Melnik, Yu.V., Blashenkov, M.N., Nikitina, I.P., Dmitriev, V.A.

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Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE von Ledyaev, O.Yu, Cherenkov, A.E., Nikolaev, A.E., Nikitina, I.P., Kuznetsov, N.I., Dunaevski, M.S., Titkov, A.N., Dmitriev, V.A.

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Properties of Si-Doped GaN Layers Grown by HVPE von Fomin, A.V., Nikolaev, A.E., Nikitina, I.P., Zubrilov, A.S., Mynbaeva, M.G., Kuznetsov, N.I., Kovarsky, A.P., Ber, B.Ja, Tsvetkov, D.V.

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Strain relaxation in GaN layers grown on porous GaN sublayers von Mynbaeva, M, Titkov, A, Kryzhanovski, A, Kotousova, I, Zubrilov, A S, Ratnikov, V V, Davydov, V Yu, Kuznetsov, N I, Mynbaev, K, Tsvetkov, D V, Stepanov, S, Cherenkov, A, Dmitriev, V A

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Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates von Kuznetsov, N.I, Mynbaeva, M.G, Melnychuk, G, Dmitriev, V.A, Saddow, S.E

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Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability von Cimalla, Volker, Kakanakov, Roumen, Hristeva, N., Lepoeva, G., Zekentes, Konstantinos, Kassamakova-Kolaklieva, L., Kuznetsov, N.I.

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Deep centers and electroluminescence in 4HSiC diodes with a p-type base region von Kuznetsov, N.I., Zubrilov, A.S.

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Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions von Nikolaev, A.E., Melnik, Yu.V., Kuznetsov, N.I., Nikitina, Irina P.

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Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method von Bauman, D., Kalinina, Evgenia V., Kuznetsov, N.I., Gavrilin, A.

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Reliability of 4H-SiC p-n Diodes on LPE Grown Layers von Kakanakov, Roumen, Hristeva, N., Philipova, P., Lepoeva, G., Zekentes, Konstantinos, Sarov, G., Cholakova, T., Kuznetsov, N.I., Kassamakova, Liliana

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Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode von Lepoeva, G., Zekentes, Konstantinos, Kakanakov, Roumen, Kuznetsov, N.I., Hristeva, N., Kassamakova, Liliana

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4H-SiC pn Diode Grown by LPE Method for High-Power Applications von Dimitrov, Ventzislav I., Kakanakov, Roumen, Gavrilin, A., Bauman, D., Zekentes, Konstantinos, Kuznetsov, N.I., Sarov, G., Cholakova, T., Kassamakova, Liliana

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Porous SiC: New Applications through In- and Out- Dopant Diffusion von Grayson, B., Saddow, Stephen E., Wolan, J.T., Mynbaeva, Marina G., Fomin, A., Ivantsov, V., Lavrent'ev, A., Kuznetsov, N.I., Mynbaev, K., Syrkin, Alexander

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Pd ohmic contacts to p-SiC 4H, 6H and 15R polytypes von Kalinina, E.V., Kholuyanov, G.F., Shchukarev, A.V., Savkina, N.S., Babanin, A.I., Yagovkina, M.A., Kuznetsov, N.I.

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Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC von Kalinina, Evgenia V., Bratus, V.Ya, Shcheglov, M.P., Kuznetsov, N.I., Nikitina, Irina P., Tregubova, Alla S., Zubrilov, A.S.

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4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates von Sukhoveyev, V., Morozov, A., Bauman, D., Dmitriev, Vladimir, Hofman, D., Rendakova, S.V., Ivantsov, V., Vida, György, Kuznetsov, N.I., Nikitina, Irina P., Zubrilov, A.S.

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4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density von Kalinina, Evgenia V., Konstantinov, Andrey O., Solov'ev, V., Karlsson, S., Dmitriev, Vladimir, Rendakova, S.V., Hallén, Anders, Kuznetsov, N.I., Zubrilov, A.S.

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Optically Transparent 6H-Silicon Carbide von Dorozhkin, Sergey I., Kuznetsov, N.I., Zubrilov, A.S., Tairov, Yuri M., Bakin, Andrey

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