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  1. 1
    Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs

    Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs von Wu, Tian-Li, Kutub, Sayeem Bin


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  2. 2
    Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices

    Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices von Mim, Nugaira Gahan, Kutub, Sayeem Bin, Haque, Anisul

    Veröffentlicht in Results in physics

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