Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors von Klein, B, Plis, E, Kutty, M N, Gautam, N, Albrecht, A, Myers, S, Krishna, S

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Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers von Gautam, N., Kim, H. S., Kutty, M. N., Plis, E., Dawson, L. R., Krishna, S.

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Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors von Kutty, M. N., Plis, E., Khoshakhlagh, A., Myers, S., Gautam, N., Smolev, S., Sharma, Y. D., Dawson, R., Krishna, S., Lee, S. J., Noh, S. K.

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Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices von Umana-Membreno, G. A., Klein, B., Kala, H., Antoszewski, J., Gautam, N., Kutty, M. N., Plis, E., Krishna, S., Faraone, L.

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Lateral diffusion of minority carriers in InAsSb-based nBn detectors von Plis, Elena, Myers, S., Kutty, M. N., Mailfert, J., Smith, E. P., Johnson, S., Krishna, S.

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Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates von BALAKRISHNAN, G, MEHTA, M, KUTTY, M. N, PATEL, P, ALBRECHT, A. R, ROTELLA, P, KRISHNA, S, DAWSON, L. R, HUFFAKER, D. L

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Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors von Plis, E., Kutty, M.N., Myers, S., Kim, H.S., Gautam, N., Dawson, L.R., Krishna, S.

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Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation von Plis, E.A., Kutty, M.N., Myers, S., Rathi, A., Aifer, E.H., Vurgaftman, I., Krishna, S.

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Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 $\mu$m von Mehta, M., Jallipalli, A., Tatebayashi, J., Kutty, M. N., Albrecht, A., Balakrishnan, G., Dawson, L. R., Huffaker, D. L.

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Electronic characteristics of the interfacial states embedded in"buffer-free" GaSb/GaAs (001) heterojunctions von Jallipalli, A., Nunna, K., Kutty, M. N., Balakrishnan, G., Dawson, L. R., Huffaker, D. L.

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GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays von Mehta, M., Balakrishnan, G., Huang, S., Khoshakhlagh, A., Jallipalli, A., Patel, P., Kutty, M. N., Dawson, L. R., Huffaker, D. L.

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Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots von Wong, P S, Liang, B L, Tatebayashi, J, Xue, L, Nuntawong, N, Kutty, M N, Brueck, S R J, Huffaker, D L

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Aquaculture development in India from a global perspective von Kutty, M. N.

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Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection von Gautam, N., Kim, H.S., Myers, S., Plis, E., Kutty, M.N., Naydenkov, Mikhail, Klein, B., Dawson, L.R., Krishna, S.

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Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array von Tatebayashi, J., Jallipalli, A., Kutty, M.N., Huang, S.H., Rotter, T.J., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.

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Post-etching mesa surface composition investigation of InAs/GaSb type-II strained layer superlattices using XPS characterization von Klein, B., Artyushkova, K., Plis, E., Jamus, A., Maji, S., Casias, L., Kutty, M.N., Krishna, S.

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Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates von Tatebayashi, J., Jallipalli, A., Kutty, M.N., Shenghong Huang, Nunna, K., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.

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Compensation of interfacial states located inside the "buffer-free"GaSb/GaAs (001) heterojunction via δ -doping von Jallipalli, A., Nunna, K., Kutty, M. N., Balakrishnan, G., Lush, G. B., Dawson, L. R., Huffaker, D. L.

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Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors von Sharma, Yagya D., Kutty, M. N., Shenoi, R. V., Barve, Ajit V., Myers, S., Shao, J., Plis, E., Lee, S., Noh, S., Krishna, S.

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Room-temperature lasing at 1.82μm of GaInSb∕AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array von Tatebayashi, J., Jallipalli, A., Kutty, M. N., Huang, S. H., Balakrishnan, G., Dawson, L. R., Huffaker, D. L.

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