Reliability of Diode-Integrated SiC Power MOSFET(DioMOS) von Kusumoto, Osamu, Ohoka, Atsushi, Horikawa, Nobuyuki, Tanaka, Kohtaro, Niwayama, Masahiko, Uchida, Masao, Kanzawa, Yoshihiko, Sawada, Kazuyuki, Ueda, Tetsuzo

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Normally-Off 4H-SiC Power MOSFET with Submicron Gate von Egashira, Kyoko, Hayashi, Masashi, Yamashita, Kenya, Kusumoto, Osamu, Kitabatake, Makoto, Takahashi, Kunimasa, Uchida, Masao, Kudo, Chiaki, Hashimoto, Shin, Utsunomiya, Kazuya, Hashimoto, Koichi

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Semiconductor device von Ohoka, Atsushi, Kusumoto, Osamu

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SEMICONDUCTOR DEVICE von KUSUMOTO OSAMU, OHOKA ATSUSHI

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Silicon carbide semiconductor device von Horikawa, Nobuyuki, Hayashi, Masashi, Kusumoto, Osamu, Uchida, Masao

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Influence of the Metal Film of Micro-cantilever Fabricated by Photolithographical Technique on the Mechanical Resonant Frequency von Kuroe, Akio, Murata, Akio, Muramatsu, Sayuri, Yokoyama, Kazuo, Kusumoto, Osamu

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PIXE in Determination of Argon Impurity in Ion Beam Sputter-Deposited Co–Cr Films von Shoji, Fumiya, Taniguchi, Hideki, Kusumoto, Osamu, Oura, Kenjiro, Hanawa, Teruo, Suzuki, Yoshihiko, Ogawa, Soichi

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Nitrogen delta doping in 6H silicon carbide layers von Yokogawa, Toshiya, Takahashi, Kunimasa, Uenoyama, Takeshi, Kusumoto, Osamu, Uchida, Masao, Kitabatake, Makoto

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Comparative Studies in the Ethnic Problem between Sri Lanka and Malaysia von KUSUMOTO, Osamu

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Research of Liberty, on the aspect of Power analysis von Kusumoto, Osamu

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Formation of SiC Delta-Doped-Layer Structures by CVD von Uchida, Masao, Takahashi, Kunimasa, Miyanaga, Ryouko, Kusumoto, Osamu, Kitabatake, Makoto, Yamashita, Kenya

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SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD von KUSUMOTO OSAMU

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SiC Delta-Doped-Layer Structures and DACFET von Uchida, Masao, Takahashi, Kunimasa, Kusumoto, Osamu, Kitabatake, Makoto, Yamashita, Kenya

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SEMICONDUCTOR DEVICE von TAKAHASHI, Kunimasa, UCHIDA, Masao, KITABATAKE, Makoto, YAMASHITA, Kenya, KUSUMOTO, Osamu

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SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET) von Takahashi, Kunimasa, Miyanaga, Ryouko, Yokogawa, Toshiya, Kusumoto, Osamu, Kitabatake, Makoto, Yamashita, Kenya, Uchida, Masao

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SEMICONDUCTOR DEVICE von OOKA ATSUSHI, KUSUMOTO OSAMU

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Silicon carbide semiconductor element and method for manufacturing the same von Uchida Masao, Horikawa Nobuyuki, Kusumoto Osamu, Ohoka Atsushi

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4H-SiC Delta-Doped Accumulation-Channel MOS FET von Uchida, Masao, Takahashi, Kunimasa, Yokogawa, Toshiya, Kusumoto, Osamu, Kitabatake, Makoto, Yamashita, Kenya

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Silicon carbide semiconductor device von Uchida Masao, Horikawa Nobuyuki, Kusumoto Osamu, Hayashi Masashi

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Semiconductor device and manufacturing method thereof von HORIKAWA NOBUYUKI, KUSUMOTO OSAMU, UCHIDA MASAO

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