Electrical and physical properties of structures with p-n transition produced from silicon obtained by fivefold meltdown of metallurgical silicon in a solar oven von Saidov, A. S., Leiderman, A. Yu, Manshurov, Sh. T., Kurmantaev, A. N., Bakhtibaeva, S. A.

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Growth of [.sub.x] solid solution films and investigation of their structural and some photoelectric properties von Saidov, A.S, Saidov, M.S, Usmonov, Sh.N, Leiderman, A.Yu, Kalanov, M.U, Gaimnazarov, K.G, Kurmantaev, A.N

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Growth of (GaAs)1 − x(ZnSe)x solid solution films and investigation of their structural and some photoelectric properties von Saidov, A. S., Saidov, M. S., Usmonov, Sh. N., Leiderman, A. Yu, Kalanov, M. U., Gaimnazarov, K. G., Kurmantaev, A. N.

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Tin impurity atoms in vacuum deposited amorphous silicon von Nasredinov, F. S., Andreev, A. A., Kurmantaev, A. N., Regel, A. R., Seregin, P. P.

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Mössbauer Study of Two-Electron Exchange between Neutral and Ionized Tin Donor Centers in Solid Solutions on the Basis of PbS and PbSe von Nasredinov, F. S., Prokofieva, L. V., Seregin, P. P., Zarubo, S. V., Ermolaev, A. V., Kurmantaev, A. N.

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