Investigation of temperature characteristics of UV-LEDs with different GaN AlGaN heterostructures von Evseenkov, A S, Kurin, S Yu, Tadtaev, P O, Tarasov, S A, Solomonov, A V

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Research of the solar-blind and visible-blind photodetectors, based on the AlGaN solid solutions von Lamkin, I A, Tarasov, S A, Petrov, A A, Menkovich, E A, Solomonov, A V, Kurin, S Yu

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Laser cutting of GaN Al2O3 structures von Medvedev, O S, Khait, O, Kurin, S Yu, Usikov, A S, Papchenko, B P, Helava, H, Makarov, Yu N

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The efficiency of GaN AlGaN p-n heterostructures in UV spectral range von Kurin, S Yu, Usikov, A S, Papchenko, B P, Helava, H, Makarov, Yu N, Evseenkov, A S, Tarasov, S A, Solomonov, A V

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Selectivity control of photosensitivity of Ag-GaP and Ag- AlGaN structures von Lamkin, I A, Tarasov, S A, Solomonov, A V, Andreev, M Y, Kurin, S Yu

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Selective Au-AlGaN photodetectors for the 350 - 370 nm wavelength range von Altimime, S M, Evseenkov, A S, Mikhailov, I I, Tarasov, S A, Lamkin, I A, Andreev, M Y, Solomonov, A V, Kurin, S Yu

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Photoelectrochemical corrosion of GaN-based p-n structures von Fomichev, A D, Kurin, S Yu, Ermakovi, I A, Puzyk, M V, Usikov, A S, Helava, H, Nikiforov, A, Papchenko, B P, Makarov, Yu N, Chernyakov, A E

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Selectivity control of photosensitivity Au-AlGaN structures von Andreev, M Yu, Tarasov, S A, Lamkin, I A, Mikhailov, I I, Solomonov, A V, Kurin, S Yu

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Investigation into the processes of atom redistribution encountered during of the formation of metal layers on the surface of aluminum gallium nitride von Lamkin, I A, Tarasov, S A, Petrov, A A, Menkovich, E A, Solomonov, A V, Kurin, S Yu

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Application of GaN for photoelectrolysis of water von Puzyk, M V, Usikov, A S, Kurin, S Yu, Puzyk, A M, Fomichev, A D, Ermakov, I A, Kovalev, D S, Papchenko, B P, Helava, H, Makarov, Yu N

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The efficiency of UV LEDs based on GaN AlGaN heterostructures von Evseenkov, A S, Tarasov, S A, Kurin, S Yu, Usikov, A S, Papchenko, B P, Helava, H, Makarov, Yu N, Solomonov, A V

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Optical transmission of strained GaN sapphire structures von Kurin, S Yu, Puzyk, M V, Ermakov, I A, Antipov, A A, Barash, I. S., Roenkov, A D, Ratnikov, V V, Usikov, A S, Papchenko, B P, Helava, H, Makarov, Yu N, Chernyakov, A E

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Etching of GaN layers at electrolysis under UV-irradiation von Zubenko, T K, Puzyk, M V, Stozharov, V M, Ermakov, I A, Kovalev, D S, Ivanova, S A, Usikov, A S, Medvedev, O S, Papchenko, B P, Kurin, S Yu, Antipov, A A, Chernyakov, A E

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Nanomaterial disordering in AlGaN GaN UV LED structures von Shabunina, E I, Levinshtein, M E, Kulagina, M M, Kurin, S Yu, Chernyakov, A E, Petrov, V N, Ratnikov, V V, Smirnova, I N, Troshkov, S I, Shmidt, N M, Usikov, A S, Helava, H, Makarov, Yu N

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UV LEDs for high-current operation von Kurin, S Yu, Antipov, A A, Roenkov, A D, Barash, I S, Helava, H I, Menkovich, E A, Tarasov, S A, Lamkin, I A, Shmidt, N M, Makarov, Yu N

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Self-heating process influence on efficiency of luminescence of nitride-based heterostructures von Menkovich, E A, Tarasov, S A, Lamkin, I A, Kurin, S Yu, Antipov, A A, Roenkov, A D, Barash, I S, Helava, H I, Makarov, Yu N

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Study of the characteristics of UVA LEDs grown by HVPE: active region thickness-dependent performance von Menkovich, E A, Tarasov, S A, Lamkin, I A, Solomonov, A V, Kurin, S Yu, Antipov, A A, Barash, I S, Roenkov, A D, Usikov, A S, Helava, H I, Makarov, Yu N

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Conversion efficiency in a solar splitting system von Kurin, S Yu, Doronin, V D, Ivanov, S A, Helava, H I, Papchenko, B P, Antipov, A A, Usikov, A S, Makarov, Yu N

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Laser cutting of GaN/Al 2 O 3 structures von Medvedev, O S, Khait, O, Kurin, S Yu, Usikov, A S, Papchenko, B P, Helava, H, Makarov, Yu N

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15 eV Protons Irradiation of the GaN Schottky Diodes von Strel'chuk, Anatoly M., Roenkov, Alexander D., Usikov, A.S., Mynbaeva, Marina G., Kozlovski, Vitalii V., Bogdanova, Elena V., Barash, I.S., Lebedev, Alexander A., Belov, S.V., Kurin, Sergey, Makarov, Yuri

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