Amorphous metal oxide semiconductor thin film, analog memristor, and autonomous local learning for neuromorphic systems von Kimura, Mutsumi, Sumida, Ryo, Kurasaki, Ayata, Imai, Takahito, Takishita, Yuta, Nakashima, Yasuhiko

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Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density von Kurasaki, Ayata, Tanaka, Ryo, Sugisaki, Sumio, Matsuda, Tokiyoshi, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru, Kimura, Mutsumi

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50.3: Invited Paper: GTO TFT, Memristor, Thermoelectric Device, Neuromorphic System, etc von Kimura, Mutsumi, Matsuda, Tokiyoshi, Sugisaki, Sumio, Kurasaki, Ayata, Horiuchi, Isao

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Neuromorphic System with Crosspoint-Type Amorphous Ga-Sn-O Thin-Film Devices as Self-Plastic Synapse Elements von Kimura, Mutsumi, Umeda, Kenta, Ikushima, Keisuke, Hori, Toshimasa, Tanaka, Ryo, Shimura, Junpei, Kondo, Atsushi, Tsuno, Takumi, Sugisaki, Sumio, Kurasaki, Ayata, Hashimoto, Kaito, Matsuda, Tokiyoshi, Kameda, Tomoya, Nakashima, Yasuhiko

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Dependence of Memristor Characteristic on Electrode Size of Ga-Sn-O Thin Film von Sugisaki, Sumio, Kurasaki, Ayata, Tanaka, Ryo, Matsuda, Tokiyoshi, Kimura, Mutsumi

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Room Temperature Fabrication of Resistive Switching Memory Using Ga-Sn-O Thin Film von Sugisaki, Sumio, Tanaka, Ryo, Kurasaki, Ayata, Matsuda, Tokiyoshi, Kimura, Mutsumi

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Neuromorphic device using amorphous oxide semiconductor as memory element von Sugisaki, Sumio, Kurasaki, Ayata, Tanaka, Ryo, Takishita, Yuta, Matsuda, Tokiyoshi, Nakashima, Yasuhiko, Kimura, Mutsumi

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非結晶酸化物半導体を記憶素子として用いたニューロモロフィックデバイス von 杉崎, 澄生, 倉崎, 彩太, 田中, 遼, 滝下, 雄太, 松田, 時宜, 中島, 康彦, 木村, 睦

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Ga-Sn-O薄膜のメモリスタ特性の電極サイズ依存性 von 杉崎, 澄生, 倉崎, 彩太, 田中, 遼, 松田, 時宜, 木村, 睦

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Ga-Sn-O薄膜を用いた抵抗変化型メモリの室温作製 von 杉崎, 澄生, 田中, 遼, 倉崎, 彩太, 松田, 時宜, 木村, 睦

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