Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation von Vitusevich, S.A., Kurakin, A.M., Konakova, R.V., Belyaev, A.E., Klein, N.

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Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures von Kurakin, A. M., Vitusevich, S. A., Danylyuk, S. V., Hardtdegen, H., Klein, N., Bougrioua, Z., Naumov, A. V., Belyaev, A. E.

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Effects of γ-irradiation on AlGaN/GaN-based HEMTs von Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

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Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structures von Vitusevich, S. A., Petrychuk, M. V., Danylyuk, S. V., Kurakin, A. M., Klein, N., Belyaev, A. E.

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Influence of Small Doses of Gamma Irradiation on Transport and Noise Properties of SiC MESFETs von Vitusevich, S.A., Kurakin, A.M., Danylyuk, S.V., Klein, N., CNI-Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Juelich, 52425 Juelich, Petrychuk, M.V., Belyaev, A.E., Cha, H.-Y., Spencer, M.G., Eastman, L.F.

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High-Frequency Noise In AlGaN/GaN Heterostructures von Vitusevich, S A, Petrychuk, M V, Danylyuk, S V, Kurakin, A M, Belyaev, A E, Klein, N

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Low-Temperature Transport in AlGaN/GaN 2D Electron Systems von Vitusevich, S A, Kurakin, A M, Danylyuk, S V, Klein, N, Luth, H, Belyaev, A E

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AlGaN/GaN heterostructures for hot electron and quantum effects von Vitusevich, S A, Sydoruk, V A, Kurakin, A M, Klein, N, Petrychuk, M V, Naumov, A V, Belyaev, A E

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Noise spectroscopy of AlGaN/GaN HEMT structures with long channels von Vitusevich, S A, Petrychuk, M V, Kurakin, A M, Danylyuk, S V, Mayer, D, Bougrioua, Z, Naumov, A V, Belyaev, A E, Klein, N

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Low-frequency noise in AlGaN/GaN HEMT structures with AlN thin film layer von Vitusevich, S. A., Antoniuk, O. A., Petrychuk, M. V., Danylyuk, S. V., Kurakin, A. M., Belyaev, A. E., Klein, N.

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Capacitance characterization of AlN/GaN double-barrier resonant tunnelling diodes von Kurakin, A. M., Vitusevich, S. A., Danylyuk, S. V., Naumov, A. V., Foxon, C. T., Novikov, S. V., Klein, N., Lüth, H., Belyaev, A. E.

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Effect of gamma radiation on the characteristics of gallium nitride HEMT heterostructures von Kurakin, A. M.

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Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation von Kurakin, A. M., Vitusevich, S. A., Danylyuk, S. V., Hardtdegen, H., Klein, N., Bougrioua, Z., Danilchenko, B. A., Konakova, R. V., Belyaev, A. E.

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Mechanisms of current formation in resonant tunneling AlN∕GaN heterostructures von Petrychuk, M. V., Belyaev, A. E., Kurakin, A. M., Danylyuk, S. V., Klein, N., Vitusevich, S. A.

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Mechanisms of current formation in resonant tunneling Al N ∕ Ga N heterostructures von Petrychuk, M. V., Belyaev, A. E., Kurakin, A. M., Danylyuk, S. V., Klein, N., Vitusevich, S. A.

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Mechanism of mobility increase of the two-dimensional electron gasin Al Ga N ∕ Ga N heterostructures under small dose gamma irradiation von Kurakin, A. M., Vitusevich, S. A., Danylyuk, S. V., Hardtdegen, H., Klein, N., Bougrioua, Z., Danilchenko, B. A., Konakova, R. V., Belyaev, A. E.

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Dynamic redistribution of the electric field of the channel in AlGaN∕GaN high electron mobility transistor with nanometer-scale gate length von Vitusevich, S. A., Danylyuk, S. V., Kurakin, A. M., Klein, N., Lüth, H., Petrychuk, M. V., Belyaev, A. E.

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Origin of noise in Al Ga N ∕ Ga N heterostructures in the range of 10 - 100 MHz von Vitusevich, S. A., Danylyuk, S. V., Kurakin, A. M., Klein, N., Offenhäusser, A., Petrychuk, M. V., Belyaev, A. E.

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Origin of noise in AlGaN∕GaN heterostructures in the range of 10–100MHz von Vitusevich, S. A., Danylyuk, S. V., Kurakin, A. M., Klein, N., Offenhäusser, A., Petrychuk, M. V., Belyaev, A. E.

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Dynamic redistribution of the electric field of the channel in Al Ga N ∕ Ga N high electron mobility transistor with nanometer-scale gate length von Vitusevich, S. A., Danylyuk, S. V., Kurakin, A. M., Klein, N., Lüth, H., Petrychuk, M. V., Belyaev, A. E.

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