Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy von Srinivasan, V. S. S., Chopra, S., Karkare, P., Bafna, P., Lashkare, S., Kumbhare, P., Kim, Y., Srinivasan, S., Kuppurao, S., Lodha, S., Ganguly, U.

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The high growth rate of epitaxial silicon–carbon alloys by using chemical vapour deposition and neopentasilane von Chung, K H, Sturm, J C, Sanchez, E, Singh, K K, Kuppurao, S

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High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications von Ye, Zhiyuan, Chopra, Saurabh, Lapena, Rubi, Kim, Yihwan, Kuppurao, Satheesh

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Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane von Chung, K. H., Yao, N., Benziger, J., Sturm, J. C., Singh, K. K., Carlson, D., Kuppurao, S.

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Real-time monitoring of endogenous lipid peroxidation by exhaled ethylene in patients undergoing cardiac surgery von Cristescu, Simona M, Kiss, Rudolf, Hekkert, Sacco te Lintel, Dalby, Miles, Harren, Frans J M, Risby, Terence H, Marczin, Nandor

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Fabrication of \hbox\hbox/\hbox pMOSFETs Using Corrugated Substrates for Improved I and Reduced Layout-Width Dependence von Ho, B., Nuo Xu, Wood, B., Vinh Tran, Chopra, S., Yihwan Kim, Bich-Yen Nguyen, Bonnin, O., Mazure, C., Kuppurao, S., Chorng-Ping Chang, Tsu-Jae King Liu

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FINITE-ELEMENT FORMULATIONS FOR ACCURATE CALCULATION OF RADIANT HEAT TRANSFER IN DIFFUSE-GRAY ENCLOSURES von Kuppurao, Satheesh, Derby, Jeffrey J.

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Epitaxial Si punch-through based selector for bipolar RRAM von Bafna, P., Karkare, P., Srinivasan, S, Chopra, S., Lashkare, S., Kim, Y., Srinivasan, S., Kuppurao, S., Lodha, S., Ganguly, U.

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Electrical characterisation of oxides grown in different RTP ambients von Brazzelli, D, Ghidini, G, Crivelli, B, Zonca, R, Bersani, M, Xing, G.C, Miner, G.E, D’Astici, N, Kuppurao, S, Lopes, D

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Ultrahigh growth rate of epitaxial silicon by chemical vapor depositionat low temperature with neopentasilane von Chung, K. H., Yao, N., Benziger, J., Sturm, J. C., Singh, K. K., Carlson, D., Kuppurao, S.

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Epitaxial Growth on High Aspect Ratio Structures von Chopra, Saurabh, Tran, Vinh, Wood, Bingxi, Kim, Yihwan, Kuppurao, Satheesh

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Designing thermal environments to promote convex interface shapes during the vertical Bridgman growth of cadmium zinc telluride von Kuppurao, Satheesh, Derby, Jeffrey J.

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Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability von Ho, B., Nuo Xu, Bingxi Wood, Tran, V., Chopra, S., Yihwan Kim, Bich-Yen Nguyen, Bonnin, O., Mazure, C., Kuppurao, S., Chorng-Ping Chang, Liu, Tsu-Jae King

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Analysis of interrupted growth strategies for cadmium telluride in an unseeded vertical Bridgman system von Kuppurao, Satheesh, Brandon, Simon, Derby, Jeffrey J.

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Chemical Vapor Deposition Epitaxy of Silicon and Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane von Sturm, James C., Chung, Keith H., Yao, N., Sanchez, E., Singh, K. K. K., Carlson, D., Kuppurao, S.

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On the effects of ampoule tilting during vertical Bridgman growth: three-dimensional computations via a massively parallel, finite element method von Xiao, Qiang, Kuppurao, Satheesh, Yeckel, Andrew, Derby, Jeffrey J.

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Parallel computation of radiation view factors between two arbitrarily oriented surfaces von Kuppurao, S., Tantra, I., Derby, J. J.

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Selective Epitaxial Phosphorus-Doped SiGe Layers for Short-Channel Effect Reduction von Jeongwon Park, Balasubramanian, R., Jain, A., Riley, D., Juneja, H., Kuppurao, S.

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Epitaxial Growth of Si/Si1-xGex Films on Corrugated Substrates for Improved pMOSFET Performance von Chopra, S., Vinh Tran, Bingxi Wood, Ho, Byron, Yihwan Kim, Chang, C. P., Kuppurao, S., Tsu-Jae King Liu

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Chemical Vapor Deposition Epitaxy of Silicon and Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane von Sturm, James C., Chung, K., Sanchez, E., Singh, K. K. K., Kuppurao, S.

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