Tail bit implications in advanced 2 transistors-flash memory device reliability von Scarpa, A, Tao, G, Dijkstra, J, Kuper, F.G

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Progressive degradation in a-Si:H/SiN thin film transistors von Merticaru, A.R., Mouthaan, A.J., Kuper, F.G.

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Reliability implications in advanced embedded two-transistor-Fowler–Nordheim-NOR flash memory devices von Scarpa, A., Tao, G., Dijkstra, J., Kuper, F.G.

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Plasma Charging Damage Reduction in IC Processing by A Self-balancing Interconnect von WANG, Z, ACKAERT, J, SALM, C, KUPER, F. G, DE BACKER, E

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A concept to relate wire bonding parameters to bondability and ball bond reliability von Liang, Z.N., Kuper, F.G., Chen, M.S.

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Determination of the contribution of defect creation and charge trapping to the degradation of a-Si:H/SiN TFTs at room temperature and low voltages von Merticaru, A.R., Mouthaan, A.J., Kuper, F.G.

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The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors von Tošić Golo, N., van der Wal, S., Kuper, F.G., Mouthaan, T.

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Zapping thin film transistors von Tošić Golo, N., Kuper, F.G., Mouthaan, T.

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Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations von Mouthaan, A.J, Salm, C, Lunenborg, M.M, de Wolf, M.A.R.C, Kuper, F.G

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Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs von Salm, C., Hof, A.J., Kuper, F.G., Schmitz, J.

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Turn-on speed of grounded gate nMOS ESD protection transistors von Meneghesso, G., Luchies, J.R.M., Kuper, F.G., Mouthaan, A.J.

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MOSFET Degradation Under RF Stress von Sasse, G.T., Kuper, F.G., Schmitz, J.

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Validating foundry technologies for extended mission profiles von van Dijk, K, Volf, P A J, Detcheverry, C, Yau, A, Ngan, P, Liang, Z, Kuper, F G

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Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors von Golo, N.T., Kuper, F.G., Mouthaan, T.J.

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Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime von Nguyen, H.V., Salm, C., Wenzel, R., Mouthaan, A.J., Kuper, F.G.

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Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling von Nguyen, H.V., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B., Bisschop, J., Mouthaan, A.J., Kuper, F.G.

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Plasma-charging damage of floating MIM capacitors von Zhichun Wang, Ackaert, J., Salm, C., Kuper, F.G., Tack, M., De Backer, E., Coppens, P., Luc De Schepper, Vlachakis, B.

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Corrections to aMOSFET Degradation Under RF Stress von Sasse, G T, Kuper, F G, Schmitz, J

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Grounded-gate nMOS transistor behavior under CDM ESD stress conditions von Verhaege, K., Russ, C., Luchies, J.-M., Groeseneken, G., Kuper, F.G.

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Strategies to cope with plasma charging damage in design and layout phases von Wang, Z., Ackaert, J., Scarpa, A., Salm, C., Kuper, F.G., Vugts, M.

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