GaN-based micro-LED arrays on flexible substrates for optical cochlear implants von Goßler, Christian, Bierbrauer, Colin, Moser, Rüdiger, Kunzer, Michael, Holc, Katarzyna, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim, Schwaerzle, Michael, Ruther, Patrick, Paul, Oliver, Neef, Jakob, Keppeler, Daniel, Hoch, Gerhard, Moser, Tobias, Schwarz, Ulrich T

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Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes von Kato, Hiromitsu, Wolfer, Marco, Schreyvogel, Christoph, Kunzer, Michael, Müller-Sebert, Wolfgang, Obloh, Harald, Yamasaki, Satoshi, Nebel, Christoph

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Reduced nonthermal rollover of wide-well GaInN light-emitting diodes von Maier, Markus, Köhler, Klaus, Kunzer, Michael, Pletschen, Wilfried, Wagner, Joachim

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Reduction of the threading edge dislocation density in AlGaN epilayers by GaN nucleation for efficient 350 nm light emitting diodes von Gutt, Richard, Kirste, Lutz, Passow, Thorsten, Kunzer, Michael, Köhler, Klaus, Wagner, Joachim

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Influence of sample thickness and concentration of Ce dopant on the optical properties of YAG:Ce ceramic phosphors for white LEDs von Waetzig, Katja, Kunzer, Michael, Kinski, Isabel

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High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes von Passow, Thorsten, Gutt, Richard, Kunzer, Michael, Pletschen, Wilfried, Kirste, Lutz, Forghani, Kamran, Scholz, Ferdinand, Köhler, Klaus, Wagner, Joachim

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Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes von Passow, Thorsten, Kunzer, Michael, Pfeuffer, Alexander, Binder, Michael, Wagner, Joachim

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Aluminum–germanium wafer bonding of (AlGaIn)N thin-film light-emitting diodes von Goßler, Christian, Kunzer, Michael, Baum, Mario, Wiemer, Maik, Moser, Rüdiger, Passow, Thorsten, Köhler, Klaus, Schwarz, Ulrich T., Wagner, Joachim

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Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs von Maier, Markus, Passow, Thorsten, Kunzer, Michael, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim

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Microstructural and optical emission properties of diamond multiply twinned particles von Lebedev, Vadim, Yoshikawa, Taro, Schreyvogel, Christoph, Kirste, Lutz, Weippert, Jürgen, Kunzer, Michael, Graff, Andreas, Ambacher, Oliver

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GaN doped with beryllium—An effective light converter for white light emitting diodes von Teisseyre, Henryk, Bockowski, Michal, Grzegory, Izabella, Kozanecki, Adrian, Damilano, Benjamin, Zhydachevskii, Yaroslav, Kunzer, Michael, Holc, Katarzyna, Schwarz, Ulrich T.

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Laser Repair of Defects in GaN LEDs von Delmdahl, Ralph, Passow, Thorsten, Kunzer, Michael, Binder, Michael

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Laser Repair of Defects in GaN LEDs: Excimer laser defect ablation is the optimum method for repairing the two major LED types von Delmdahl, Ralph, Passow, Thorsten, Kunzer, Michael, Binder, Michael

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Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation von Albrecht, Bjorn, Kopta, Susanne, John, Oliver, Rutters, Martin, Kunzer, Michael, Driad, Rachid, Marenco, Norman, Kohler, Klaus, Walther, Martin, Ambacher, Oliver

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Sub-surface channels in sapphire made by ultraviolet picosecond laser irradiation and selective etching von Moser, Rüdiger, Ojha, Nirdesh, Kunzer, Michael, Schwarz, Ulrich T

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Line beam processing for laser lift-off of GaN from sapphire von Delmdahl, Ralph, Pätzel, Rainer, Brune, Jan, Senczuk, Rolf, Goßler, Christian, Moser, Rüdiger, Kunzer, Michael, Schwarz, Ulrich T.

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Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition von Moser, Rüdiger, Goßler, Christian, Kunzer, Michael, Köhler, Klaus, Pletschen, Wilfried, Brunne, Jens, Schwarz, Ulrich T., Wagner, Joachim

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AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency von Gutt, Richard, Passow, Thorsten, Kunzer, Michael, Pletschen, Wilfried, Kirste, Lutz, Forghani, Kamran, Scholz, Ferdinand, Köhler, Klaus, Wagner, Joachim

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Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm von Moudakir, T., Genty, F., Kunzer, M., Borner, P., Passow, T., Suresh, S., Patriarche, G., Kohler, K., Pletschen, W., Wagner, J., Ougazzaden, A.

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Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side von Passow, Thorsten, Kunzer, Michael, Börner, Paul, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim

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