Nature of the 2.8 eV photoluminescence band in Mg doped GaN von Kaufmann, U., Kunzer, M., Maier, M., Obloh, H., Ramakrishnan, A., Santic, B., Schlotter, P.

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Origin of defect-related photoluminescence bands in doped and nominally undoped GaN von Kaufmann, U., Kunzer, M., Obloh, H., Maier, M., Manz, Ch, Ramakrishnan, A., Santic, B.

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Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency von Köhler, K., Stephan, T., Perona, A., Wiegert, J., Maier, M., Kunzer, M., Wagner, J.

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Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy von Yoshikawa, M., Kunzer, M., Wagner, J., Obloh, H., Schlotter, P., Schmidt, R., Herres, N., Kaufmann, U.

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Oxidation behaviour of carbon monoxide at the photostimulated surface of ZnO nanowires von WANG, Ch Y, KINZER, M, YOUN, S. K, RAMGIR, N, KUNZER, M, KÖHLER, K, ZACHARIAS, M, CIMALLA, V

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Do Personality Differences Between Teachers and Learners Impact Students' Evaluations of a Surgery Clerkship? von Bell, Mary Alice, MA, Wales, Paula S., EdD, Torbeck, Laura J., PhD, Kunzer, John M., MD, Thurston, Virginia C., PhD, Brokaw, James J., PhD

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Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects von Zibold, A., Dammann, M., Schmidt, R., Konstanzer, H., Kunzer, M.

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Thermal and non-thermal saturation effects in the output characteristic of UV-to-violet emitting (AlGaIn)N LEDs von Baeumler, M., Kunzer, M., Schmidt, R., Liu, S., Pletschen, W., Schlotter, P., Köhler, K., Kaufmann, U., Wagner, J.

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Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures von Wagner, J., Obloh, H., Kunzer, M., Maier, M., Köhler, K., Johs, B.

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Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron von Baur, J., Maier, K., Kunzer, M., Kaufmann, U., Schneider, J.

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Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors von Aidam, R., Kirste, L., Kunzer, M., Müller, S., Waltereit, P.

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Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures von Kunzer, M., Baeumler, M., Köhler, K., Leancu, C.-C., Kaufmann, U., Wagner, J.

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Single Chip White LEDs von Kaufmann, U., Kunzer, M., Köhler, K., Obloh, H., Pletschen, W., Schlotter, P., Wagner, J., Ellens, A., Rossner, W., Kobusch, M.

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Mg doping profile in III-N light emitting diodes in close proximity to the active region von Köhler, K., Perona, A., Maier, M., Wiegert, J., Kunzer, M., Wagner, J.

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Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures von Kunzer, M., Leancu, C.-C., Maier, M., Köhler, K., Kaufmann, U., Wagner, J.

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Free and bound excitons in thin wurtzite GaN layers on sapphire von Merz, C, Kunzer, M, Kaufmann, U, Akasaki, I, Amano, H

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Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate von Maier, M., Köhler, K., Kunzer, M., Wiegert, J., Liu, S., Kaufmann, U., Wagner, J.

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Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers von Baur, J., Maier, K., Kunzer, M., Kaufmann, U., Schneider, J., Amano, H., Akasaki, I., Detchprohm, T., Hiramatsu, K.

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Resonant Raman scattering from buried AlxGa1−xN (x⩽0.17) layers in (Al, Ga, In)N heterostructures von Yoshikawa, M., Wagner, J., Obloh, H., Kunzer, M., Maier, M.

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III-N based short-wavelength LEDs, LUCO-LEDs, and lasers von Sommer, F., Stephan, T., Vollrath, F., Köhler, K., Kunzer, M., Müller, S., Schlotter, P., Pletschen, W., Kaufmann, U., Wagner, J.

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