On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb) von Zakgeim, A. L., Karandashev, S. A., Klimov, A. A., Kunkov, R. E., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A., Chernyakov, A. E.

Volltext

Longwave (λ0.1 = 10 μm, 296 K) Infrared Photodetectors Based on InAsSb0.38 Solid Solution von Kunkov, R. E., Klimov, A. A., Lebedeva, N. M., Lukhmyrina, T. S., Matveev, B. A., Remennyy, M. A., Usikova, A. A.

Volltext

Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates von Klimov, A A, Kunkov, R E, Lavrov, A A, Lebedeva, N M, Lukhmyrina, T C, Matveev, B A, Remennyi, M A

Volltext

Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure von Karandashev, S A, Klimov, A A, Kunkov, R E, Lavrov, A A, Lukhmyrina, T S, Matveev, B A, Remennyi, M A, Usikova, A A

Volltext

Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1 absorbing layers von Klimov, A A, Kunkov, R E, Lukhmyrina, T S, Matveev, B A, Lebedeva, N M, Remennyi, M A

Volltext

Photoelectric properties of heterostructures based on InAsSbx solid solutions (0.3 ˂x ˂0.35) von Kunkov, R. E., Klimov, A. A., Lebedeva, N. M., Lukhmyrina, T. C., Matveev, B. A., Remennyy, M. A.

Volltext

Room temperature mid-IR two-color photodiodes with InAs and InAs 0.9 Sb 0.1 absorbing layers von Klimov, A A, Kunkov, R E, Lukhmyrina, T S, Matveev, B A, Lebedeva, N M, Remennyi, M A

Volltext

Photoelectric properties of heterostructures based on InAsSb x solid solutions (0.3 ˂x ˂0.35) von Kunkov, R. E., Klimov, A. A., Lebedeva, N. M., Lukhmyrina, T. C., Matveev, B. A., Remennyy, M. A.

Volltext