In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC von Takeuchi, Yuuichi, Schöner, Adolf, Sugiyama, Naohiro, Malhan, Rajesh Kumar

Volltext

Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region von Takeuchi, Yuuichi, Schöner, Adolf, Sugiyama, Naohiro, Malhan, Rajesh Kumar, Kataoka, Mitsuhiro

Volltext

Fabrication of a SiC Double Gate Vertical Channel JFET and It's Application in Power Electronics von Schöner, Adolf, Bakowski, Mietek, Kumar Malhan, Rajesh, Takeuchi, Yuuichi, Sugiyama, Naohiro, Rabkowski, Jacek, Peftitsis, Dimosthenis, Ranstad, Per, Nee, Hans-Peter

Volltext

SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology von Takeuchi, Yuuichi, Malhan, Rajesh Kumar, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Kataoka, Mitsuhiro

Volltext

Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET von Takeuchi, Yuuichi, Sugiyama, Naohiro, Malhan, Rajesh Kumar, Rashid, S.J., Amaratunga, G.A.J., Reimann, T., Udrea, F., Kataoka, Mitsuhiro

Volltext

Effect of C and B sequential implantation on the B acceptors in 4H–SiC von Nakano, Yoshitaka, Malhan, Rajesh Kumar, Kachi, Tetsu, Tadano, Hiroshi

Volltext

Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices von Hara, Kazukuni, Nakamura, Hiroki, Nakamura, Daisuke, Malhan, Rajesh Kumar, Onda, Shoichi

Volltext

Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition von Chen, Yi, Kimoto, Tsunenobu, Takeuchi, Yuichi, Malhan, Rajesh Kumar, Matsunami, Hiroyuki

Volltext

Effect of C/B sequential implantation on the B acceptors in 4H–SiC von Nakano, Yoshitaka, Kachi, Tetsu, Tadano, Hiroshi, Kumar Malhan, Rajesh

Volltext

Intersection infrastructure warning system von Malhan, Rajesh Kumar, Bhatia, Tishya, Lull, Joseph

Volltext bestellen

System for predicting aggressive driving von Zhang, Ethan, Malhan, Rajesh Kumar, Zhang, Wei, Masoud, Neda

Volltext bestellen

METHOD AND SYSTEM FOR GENERATING AND PROCESSING SAFETY MESSAGES FOR VEHICLE-TO-EVERYTHING COMMUNICATION von MALHAN, Rajesh Kumar, LULL, Joseph

Volltext bestellen

System and method for predicting and interpreting driving behavior von Malhan, Rajesh Kumar, Zhang, Wei, Lull, Joseph

Volltext bestellen

System and method for predicting and interpreting driving behavior von Malhan, Rajesh Kumar, Zhang, Wei, Lull, Joseph

Volltext bestellen

INTERSECTION INFRASTRUCTURE WARNING SYSTEM von BHATIA, Tishya, MALHAN, Rajesh Kumar, LULL, Joseph

Volltext bestellen

System And Method For Predicting And Interpreting Driving Behavior von MALHAN, Rajesh Kumar, LULL, Joseph, ZHANG, Wei

Volltext bestellen

SYSTEM AND METHOD FOR PREDICTING AND INTERPRETING DRIVING BEHAVIOR von MALHAN, Rajesh Kumar, LULL, Joseph, ZHANG, Wei

Volltext bestellen

Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs von Takeuchi, Yuuichi, Malhan, Rajesh Kumar, Rashid, S.J., Mihaila, Andrej, Udrea, F., Amaratunga, G., Kataoka, Mitsuhiro

Volltext

SYSTEM FOR PREDICTING AGGRESSIVE DRIVING von MALHAN, Rajesh Kumar, MASOUD, Neda, ZHANG, Wei, ZHANG, Ethan

Volltext bestellen

Analysis of Novel Packaging Techniques for High Power Electronics in SiC von Mihaila, Andrej, Udrea, F., Amaratunga, G., Johnson, C. Mark, Malhan, Rajesh Kumar, Rashid, S.J.

Volltext