A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3) von Kukushkin, S.A., Osipov, A.V., Redkov, A.V., Grashchenko, A.S., Feoktistov, N.A., Fedotov, S.D., Statsenko, V.N., Sokolov, E.M., Timoshenkov, S.P.

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Dielectric and photovoltaic properties of heterostructure SiC / Si von O.N. Sergeeva, A.V. Solnyshkin, S.I. Gudkov, S.A. Kukushkin, I.P. Pronin, G.M. Nekrasova

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Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide von Kukushkin, S A, Osipov, A V

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Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review von Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A.

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Formation of composite SiC-C coatings on graphite via annealing Si-melt in CO von Grashchenko, A.S., Kukushkin, S.A., Osipov, A.V., Redkov, A.V.

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The peculiarities of direct gallium nitride growth on silicon substrates after surface passivation with gallium atoms and indium as a surfactant von Seredin, P.V., Goloshchapov, D.L., Kosheleva, O.K., Buylov, N.S., Peshkov, Y.A., Barkov, K.A., Kersnovsky, E.S., Mizerov, A.M., Timoshnev, S.N., Sobolev, M.S., Serikov, D.V., Chukavin, A.I., Nevedomskiy, V.N., Kukushkin, S.A.

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Spiral growth of a multicomponent crystal from vapor of its components von Redkov, A.V., Kukushkin, S.A., Osipov, A.V.

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Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC/Si substrate von Seredin, P.V., Sharofidinov, Sh. Sh, Goloshchapov, D.L., Peshkov, Y.A., Ivkov, S.A., Buylov, N.S., Eremeev, K.A., Kukushkin, S.A.

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Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate von Kukushkin, S.A., Osipov, A.V.

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Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues von Kukushkin, S.A., Mizerov, A.M., Osipov, A.V., Redkov, A.V., Timoshnev, S.N.

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Nanoindentation of GaN/SiC thin films on silicon substrate von Grashchenko, A.S., Kukushkin, S.A., Osipov, A.V., Redkov, A.V.

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Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon von Kukushkin, S. A., Osipov, A. V.

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Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates von Seredin, P.V., Goloshchapov, D.L., Kurilo, N.A., Radam, Ali Obaid, Kashkarov, V.M., Lenshin, A.S., Buylov, N.S., Nesterov, D.N., Mizerov, A.M., Kukushkin, S.A., Timoshnev, S.N., Shubina, K. Yu, Sobolev, M.S.

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Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates von Kukushkin, S. A., Osipov, A. V., Romanychev, A. I.

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First-order phase transition through an intermediate state von Kukushkin, S. A., Osipov, A. V.

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Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic substitution von Grashchenko, A.S., Kukushkin, S.A., Osipov, A.V.

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Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution von Kalinkin, I. P., Kukushkin, S. A., Osipov, A. V.

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A New Trigonal von Kitaev, Yu.E, Kukushkin, S.A, Osipov, A.V, Redkov, A.V

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Anisotropy of the solid-state epitaxy of silicon carbide in silicon von Kukushkin, S. A., Osipov, A. V.

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Elastic interaction of point defects in cubic and hexagonal crystals von Kukushkin, S. A., Osipov, A. V., Telyatnik, R. S.

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