Synergistic effects of iodine and silver ions co-implanted in 6H–SiC von Kuhudzai, R.J., Malherbe, J.B., Hlatshwayo, T.T., van der Berg, N.G., Devaraj, A., Zhu, Z., Nandasiri, M.

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Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region von Kuhudzai, R.J., Malherbe, J.B., van der Berg, N.G., Hlatshwayo, T.T., Odutemowo, O., Prinsloo, L.C., Buys, A.V., Erasmus, R., Wendler, E.

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SEM analysis of ion implanted SiC von Malherbe, Johan B., van der Berg, N.G., Botha, A.J., Friedland, E., Hlatshwayo, T.T., Kuhudzai, R.J., Wendler, E., Wesch, W., Chakraborty, P., da Silveira, E.F.

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Scanning electron microscopy of the surfaces of ion implanted SiC von Malherbe, Johan B., van der Berg, N.G., Kuhudzai, R.J., Hlatshwayo, T.T., Thabethe, T.T., Odutemowo, O.S., Theron, C.C., Friedland, E., Botha, A.J., Wendler, E.

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Iodine assisted retainment of implanted silver in 6H-SiC at high temperatures von Hlatshwayo, T.T., van der Berg, N.G., Msimanga, M., Malherbe, J.B., Kuhudzai, R.J.

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Diffusion behavior of cesium in silicon carbide at T>1000°C von Friedland, E., van der Berg, N.G., Hlatshwayo, T.T., Kuhudzai, R.J., Malherbe, J.B., Wendler, E., Wesch, W.

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Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC von Kuhudzai, R.J., van der Berg, N.G., Malherbe, J.B., Hlatshwayo, T.T., Theron, C.C., Buys, A.V., Botha, A.J., Wendler, E., Wesch, W.

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Study of iodine diffusion in silicon carbide von Friedland, E., van der Berg, N.G., Malherbe, J.B., Kuhudzai, R.J., Botha, A.J., Wendler, E., Wesch, W.

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