Mechanisms of Hot-Carrier-Induced Threshold-Voltage Shift in High-Voltage p-Type LDMOS Transistors von Chen, J.F., Kuen-Shiuan Tian, Shiang-Yu Chen, Kuo-Ming Wu, Shih, J.R., Wu, K.

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On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region von Chen, J.F., Kuen-Shiuan Tian, Shiang-Yu Chen, Kuo-Ming Wu, Liu, C.M.

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Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors von Chen, Jone F., Tian, Kuen-Shiuan, Chen, Shiang-Yu, Lee, J. R., Wu, Kuo-Ming, Liu, C. M.

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Mechanism and Modeling of On-Resistance Degradation in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors von Chen, Jone F., Tian, Kuen-Shiuan, Chen, Shiang-Yu, Wu, Kuo-Ming, Liu, C. M.

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An Investigation on Hot-Carrier Reliability and Degradation Index in Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors von Tian, Kuen-Shiuan, Chen, Jone F., Chen, Shiang-Yu, Wu, Kuo-Ming, Lee, J. R., Huang, Tsung-Yi, Liu, C. M., Hsu, S. L.

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Effects of Drift-Region Design on the Reliability of Integrated High-Voltage LDMOS Transistors von Chen, J.F., Shiang-Yu Chen, Kuen-Shiuan Tian, Kuo-Ming Wu, Yan-Kuin Su, Liu, C.M., Hsu, S.L.

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Effect of NDD dosage on hot-carrier reliability in DMOS transistors von Chen, J.F., Kuen-Shiuan Tian, Shiang-Yu Chen, Kuo-Ming Wu, Liu, C.M.

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An Investigation on Anomalous Hot-Carrier-Induced On-Resistance Reduction in n-Type LDMOS Transistors von Chen, J.F., Kuen-Shiuan Tian, Shiang-Yu Chen, Kuo-Ming Wu, Shih, J.R., Wu, K.

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