Buried-heterostructure mid-infrared quantum cascade lasers fabricated by non-selective regrowth and chemical polishing von Chang, C.-C, Kirch, J.D, Buelow, P, Boyle, C, Kuech, T.F, Lindberg, D, Earles, T, Botez, D, Mawst, L.J

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Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE) von Kim, T.W., Garrod, T.J., Mawst, L.J., Kuech, T.F., LaLumondiere, S.D., Sin, Y., Lotshaw, W.T., Moss, S.C.

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Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces von GRABOW, L. C, UHLRICH, J. J, KUECH, T. F, MAVRIKAKIS, M

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Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1―y metamorphic buffer layers on InP substrates von KIRCH, J, KIM, T. W, KONEN, J, MAWST, L. J, KUECH, T. F, KUAN, T.-S

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Practical Surface Treatments and Surface Chemistry of n-Type and p-Type GaN von Uhlrich, J.J., Grabow, L.C., Mavrikakis, M., Kuech, T.F.

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Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD von Kim, N.-H., Park, J.-H., Mawst, L.J., Kuech, T.F., Kanskar, M.

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MOCVD-Grown Dilute Nitride Type II Quantum Wells von Mawst, L.J., Huang, J.Y.-T., Xu, D.P., Jeng-Ya Yeh, Tsvid, G., Kuech, T.F., Tansu, N.

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Report on the Meetings of the International Organization for Crystal Growth Executive Council and General Assembly held during ICCG-16/ICVGE-14 in Beijing, People’s Republic of Chi... von Kuech, T.F.

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Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells von Yeh, J.-Y., Mawst, L.J., Khandekar, A.A., Kuech, T.F., Vurgaftman, I., Meyer, J.R., Tansu, N.

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GaAsSbN-GaAsSb-InP Type-II "W" Quantum Wells for Mid-IR Emission von Juno Yu-Ting Huang, Xu, D.P., Mawst, L.J., Kuech, T.F., Vurgaftman, I., Meyer, J.R.

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InAsyP1―y metamorphic buffer layers on InP substrates for mid-IR diode lasers von KIRCH, Jeremy, GARROD, Toby, MEYER, Jerry R, KUAN, Tung-Sheng, KIM, Sangho, PARK, Joo H, SHIN, Jae C, MAWST, L. J, KUECH, T. F, SONG, X, BABCOCK, S. E, VURGAFTMAN, Igor

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Evolution of epilayer tilt in thick In Ga1−As metamorphic buffer layers grown by hydride vapor phase epitaxy von Schulte, K.L., Strand, M.T., Kuech, T.F.

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Layer-thickness dependence of the compositions in strained III–V superlattices by atom probe tomography von Knipfer, B., Rajeev, A., Isheim, D., Kirch, J.D., Babcock, S.E., Kuech, T.F., Earles, T., Botez, D., Mawst, L.J.

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Evolution of epilayer tilt in thick InxGa1−xAs metamorphic buffer layers grown by hydride vapor phase epitaxy von Schulte, K.L., Strand, M.T., Kuech, T.F.

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Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics von Kim, H., Forghani, K., Guan, Y., Kim, K., Wood, A.W., Lee, J., Babcock, S.E., Kuech, T.F., Mawst, L.J.

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InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6μm-emitting quantum-cascade-laser active regions von Mawst, L.J., Kirch, J.D., Chang, C.-C., Kim, T., Garrod, T., Botez, D., Ruder, S., Kuech, T.F., Earles, T., Tatavarti, R., Pan, N., Wibowo, A.

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Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application von Kim, T.W., Kuech, T.F., Mawst, L.J.

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Regrowth of quantum cascade laser active regions on metamorphic buffer layers von Rajeev, A., Mawst, L.J., Kirch, J.D., Botez, D., Miao, J., Buelow, P., Kuech, T.F., Li, Xiaoqing, Sigler, C., Babcock, S.E., Earles, T.

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Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration von Kim, T.W., Forghani, K., Mawst, L.J., Kuech, T.F., LaLumondiere, S.D., Sin, Y., Lotshaw, W.T., Moss, S.C.

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An examination of the surface decomposition chemistry of lithium niobate precursors under high vacuum conditions von Saulys, D., Joshkin, V., Khoudiakov, M., Kuech, T.F., Ellis, A.B., Oktyabrsky, S.R., McCaughan, L.

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