An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy von Bell, A, Harrison, I, Cheng, T S, Korakakis, D, Foxon, C T, Novikov, S, Ber, B Ya, Kudriavtsev, Y A

Volltext

Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions von Usov, I. O., Suvorova, A. A., Kudriavtsev, Y. A., Suvorov, A. V.

Volltext

Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy von Qiu, Y., Nikishin, S. A., Temkin, H., Faleev, N. N., Kudriavtsev, Yu. A.

Volltext

Thermodynamic considerations in epitaxial growth of GaAs1−xNx solid solutions von Qiu, Y., Nikishin, S. A., Temkin, H., Elyukhin, V. A., Kudriavtsev, Yu. A.

Volltext

Incorporation of Mg in GaN grown by molecular beam epitaxy von Orton, J.W., Foxon, C.T., Cheng, T.S., Hooper, S.E., Novikov, S.V., Ber, B.Ya, Kudriavtsev, Yu.A.

Volltext

Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy von Ber, B Ya, Kudriavtsev, Yu A, Merkulov, A V, Novikov, S V, Lacklison, D E, Orton, J W, Cheng, T S, Foxon, C T

Volltext

Studies of Mg-GaN grown by MBE on GaAs(111)B substrates von Cheng, T. S., Foxon, C. T., Jeffs, N. J., Dewsnip, D. J., Flannery, L., Orton, J. W., Novikov, S. V., Ber, B. Ya, Kudriavtsev, Yu A.

Volltext

Sputtering of III–V semiconductors under argon atom and ion bombardment von Soshnikov, I.P., Kudriavtsev, Yu.A., Lunev, A.V., Bert, N.A.

Volltext

Mg-Doped Hexagonal InN/Al2O3 Films Grown by MBE von Mamutin, V. V., Vekshin, V. A., Davydov, V. Yu, Ratnikov, V. V., Kudriavtsev, Yu. A., Ber, B. Ya, Emtsev, V. V., Ivanov, S. V.

Volltext

MBE growth and characterization of magnesium-doped gallium nitride von Dewsnip, D J, Orton, J W, Lacklison, D E, Flannery, L, Andrianov, A V, Harrison, I, Hooper, S E, Cheng, T S, Foxon, C T, Novikov, S N, Ber, B Ya, Kudriavtsev, Yu A

Volltext

Direct SIMS Determination of the InxGa1-xN Mole Fraction von Kovarsky, A P, Kretser, Yu L, Kudriavtsev, Yu A, Stroganov, D N, Yagovkina, M A, Beierlein, Tilman, Strite, S

Volltext

Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates von Foxon, C.T., Dewsnip, D.J., Orton, J.W., Harrison, I., Novikov, S.V., Kudriavtsev, Yu.A., Jeffs, N.J., Cheng, T.S., Flannery, L.B., Ber, B.Ya

Volltext

Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates von Lundin, W.V., Ushakov, U.I., Usikov, A.S., Shmidt, N.M., Shubina, T.V., Solov'ev, V., Zadiranov, Yu.M., Pushnyi, B.V., Faleev, N.N., Kudriavtsev, Yu.A., Stepanov, M.V., Sakharov, A.V., Sitnikova, Alla A., Ber, B.Ya

Volltext

Heterostructure for UV LEDs Based on Thick AlGaN Layers von Sakharov, A V, Lundin, W V, Usikov, A, Ushakov, U I, Kudriavtsev, Yu A, Lunev, A V, Sherniakov, Y M, Ledentsov, N N

Volltext

Studies of p-GaN grown by MBE on GaAs(1 1 1)B von Foxon, C.T., Cheng, T.S., Jeffs, N.J., Dewsnip, J., Flannery, L., Orton, J.W., Harrison, I., Novikov, S.V., Ber, B.Ya, Kudriavtsev, Yu.A.

Volltext

GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine von Antipov, V.G., Guriev, A.I., Elyukhin, V.A., Faleev, N.N., Kudriavtsev, Yu.A., Lebedev, A.B., Shubina, T.V., Zubrilov, A.S., Nikishin, S.A., Temkin, H.

Volltext bestellen

Intermolecular vibrational energy transfer of highly excited CF3I molecules observed from transient UV absorption spectra von Kudriavtsev, Yu.A., Letokhov, V.S.

Volltext

Comparative analysis of corrosion of borosilicate glasses in water vapor von Kudriavtsev, Y., Asomoza, R.

Volltext

Response to “Comment on ‘Restoration of the original depth distribution from the SIMS profile using the depth resolution function in framework of RMR model’” [J. Vac. Sci. Technol.... von Kudriavtsev, Y., Asomoza, R., Moiseev, K. D.

Volltext

Synthesis of flexible and sub-microstructured gold thin films with honeycomb cavities von Zárate-Reyes, J.M., Kudriavtsev, Y., Sánchez-Dena, O., Cheang-Wong, J.C., Asomoza, R.

Volltext