Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System von Kudou, Chiaki, Nishio, Johji, Kojima, Kazutoshi, Tamura, Kentaro, Masumoto, Keiko

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Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition von Masumoto, Keiko, Kudou, Chiaki, Tamura, Kentaro, Nishio, Johji, Ito, Sachiko, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime

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Influence of Epi-Layer Growth Pits on SiC Device Characteristics von Ohno, Toshiyuki, Masumoto, Keiko, Kudou, Chiaki, Asamizu, Hirokuni, Nishio, Johji, Kojima, Kazutoshi, Tamura, Kentaro

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Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC von Ito, Sachiko, Masumoto, Keiko, Nishio, Johji, Asamizu, Hirokuni, Kudou, Chiaki, Kojima, Kazutoshi, Ohno, Toshiyuki, Tamura, Kentaro

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Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle von Masumoto, Keiko, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Ito, Sachiko, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime

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Improvement of 4H-SiC Epitaxial Layers Grown on 2o Offcut Si-Face Substrates von Nishio, Johji, Asamizu, Hirokuni, Yamada, Keiichi, Kudou, Chiaki, Tamura, Kentaro, Masumoto, Keiko, Kojima, Kazutoshi

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Improvement of 4H-SiC Epitaxial Layers Grown on 2 super(o) Offcut Si-Face Substrates von Asamizu, Hirokuni, Yamada, Keiichi, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Masumoto, Keiko, Kojima, Kazutoshi

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Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle von Masumoto, Keiko, Asamizu, Hirokuni, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime

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Homo-Epitaxial Growth on 2[degrees] Off-Cut 4H-SiC(0001) Si-Face Substrates Using H sub(2)-SiH sub(4)-C sub(3 )H sub(8) CVD System von Tamura, Kentaro, Kudou, Chiaki, Masumoto, Keiko, Nishio, Johji, Kojima, Kazutoshi

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Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle von Masumoto, Keiko, Asamizu, Hirokuni, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime

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Erratum to “Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition” [J. Cryst. Growth 381 (2013) 139–143] von Masumoto, Keiko, Kudou, Chiaki, Tamura, Kentaro, Nishio, Johji, Ito, Sachiko, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime

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Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates von Kitabatake, Makoto, Sasaki, Masayuki, Asamizu, Hirokuni, Tamura, Kentaro, Kojima, Kazutoshi, Ito, Sachiko, Yamashita, Tamotsu, Kudou, Chiaki, Sako, Hideki

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Suppression of 3 C -Inclusion Formation during Growth of 4 H -SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle von Masumoto, Keiko, Asamizu, Hirokuni, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime

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Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm [phi] Size SiC Epitaxial Wafer von Kudou, Chiaki, Tamura, Kentaro, Nishio, Jyouji, Masumoto, Keiko, Kojima, Kazutoishi, Ohno, Toshiyuki

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C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput von Nishio, Johji, Kudou, Chiaki, Kojima, Kazutoshi, Ohno, Toshiyuki, Tamura, Kentaro, Masumoto, Keiko

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Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer von Kudou, Chiaki, Masumoto, Keiko, Tamura, Kentaro, Kojima, Kazutoishi, Nishio, Jyouji, Ohno, Toshiyuki

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Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle von Ito, Sachiko, Okumura, Hajime, Ohno, Toshiyuki, Masumoto, Keiko, Kudou, Chiaki, Nishio, Johji, Kojima, Kazutoshi, Tamura, Kentaro, Goto, Hideto, Yamaguchi, Hirotaka

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Silicon carbide semiconductor device and method for manufacturing the same von Kudou, Chiaki

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Silicon carbide semiconductor substrate used to form semiconductor epitaxial layer thereon von Kudou, Chiaki

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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME von KUDOU, CHIAKI

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