Lending Sociodynamics and Drivers of the Financial Business Cycle von J. Hawkins, Raymond, Kuang, Hengyu

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Sequential choice in ordered bundles von Kohli, Rajeev, Krstovski, Kriste, Kuang, Hengyu, Lin, Hengxu

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Sequential choice in ordered bundles von Kohli, Rajeev, Krstovski, Kriste, Kuang, Hengyu, Lin, Hengxu

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Vertical β-Ga₂O₃ Schottky Barrier Diodes With Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination von Chen, Hu, Wang, Hengyu, Sheng, Kuang

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Floating Island Structure With Metal Bridge to Resolve the Turn-On Recovery Problem von Wang, Ce, Wang, Hengyu, Sheng, Kuang

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A Novel Solution to the Turn-On Recovery Problem of the Floating Island Device von Wang, Ce, Wang, Hengyu, Cheng, Haoyuan, Sheng, Kuang

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A Snapback-Free and Reverse Conducting SOI-LIGBT With Self-Adaptive Electron Barriers von Zou, Yang, Wang, Hengyu, Sheng, Kuang

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Theoretical Performance Limit of the IGBT von Wang, Hengyu, Su, Ming, Sheng, Kuang

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3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism von Wan, Jiangbin, Wang, Hengyu, Zhang, Chi, Li, Yanjun, Wang, Ce, Cheng, Haoyuan, Li, Junze, Ren, Na, Guo, Qing, Sheng, Kuang

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Post-trench restoration for vertical GaN power devices von Li, Yanjun, Ren, Na, Wang, Hengyu, Guo, Qing, Wang, Ce, Cheng, Haoyuan, Wan, Jiangbin, Li, Junze, Sheng, Kuang

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4.15 kV/4.6 mΩ⋅cm² 4H-SiC Epi-Refilled Super-Junction Schottky Diode With Ring Assisted Super-Junction Termination Extension von Cheng, Haoyuan, Wang, Hengyu, Wang, Ce, Wan, Jiangbin, Zhang, Chi, Sheng, Kuang

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Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN Devices von He, Quanbo, Wang, Hengyu, Xiao, Ming, Zhang, Yuhao, Sheng, Kuang, Udrea, Florin

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4H-SiC Super-Junction JFET: Design and Experimental Demonstration von Wang, Hengyu, Wang, Ce, Wang, Baozhu, Ren, Na, Sheng, Kuang

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Design and Fabrication of 1.92 kV 4H-SiC Super-Junction SBD With Wide-Trench Termination von Wang, Baozhu, Wang, Hengyu, Wang, Ce, Ren, Na, Guo, Qing, Sheng, Kuang

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2.5kV/3.78mΩ⋅cm² Low Forward Voltage Vertical β-Ga₂O₃ Schottky Rectifier With Field Plate Assisted Deep Mesa Termination von Wan, Jiangbin, Wang, Hengyu, Wang, Ce, Chen, Haoyuan, Zhang, Chi, Zhang, Luanxi, Li, Yanjun, Sheng, Kuang

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Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation von Wang, Ce, Wang, Hengyu, Wang, Baozhu, Cheng, Haoyuan, Sheng, Kuang

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Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current von Liu, Li, Wang, Jue, Wang, Hengyu, Ren, Na, Guo, Qing, Sheng, Kuang

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1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability von Wu, Jiupeng, Ren, Na, Wang, Hengyu, Sheng, Kuang

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Saturation thickness of stacked SiO2 in atomic-layer-deposited Al2O3 gate on 4H-SiC von Shao, Zewei, Xu, Hongyi, Wang, Hengyu, Ren, Na, Sheng, Kuang

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Hybrid Termination With Wide Trench for 4H-SiC Super-Junction Devices von Wang, Hengyu, Wang, Ce, Wang, Baozhu, Long, Hu, Sheng, Kuang

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