Treffer 1 - 5 von 5 für Suche 'Kryuchkov, Yu.Yu', Suchdauer: 0,31s Treffer weiter einschränken
  1. 1
    The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation

    The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation von Ardyshev, M. V., Ardyshev, V. M., Kryuchkov, Yu. Yu

    Veröffentlicht in Semiconductors (Woodbury, N.Y.)

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  2. 2
    Formation of conductive layers on dielectric substrates by ion bombardment

    Formation of conductive layers on dielectric substrates by ion bombardment von Pichugin, V.F., Frangulian, T.S., Kryuchkov, Yu.Yu, Feodorov, A.N., Riabchikov, A.I.


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  3. 3
    Positron Annihilation and Profiles of Radiation Damages in GaAs and Si Crystals Irradiated by Supercurrent Proton or Electron Beams

    Positron Annihilation and Profiles of Radiation Damages in GaAs and Si Crystals Irradiated by Supercurrent Proton or Electron Beams von Pogrebnyak, A. D., Boyarko, E. Yu, Kryuchkov, Yu. Yu, Vorobev, S. A.


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  4. 4
    Angular distributions of 40, 80, and 160 mev positrons scattered by aluminum foils

    Angular distributions of 40, 80, and 160 mev positrons scattered by aluminum foils von Vorob'ev, S. A., Kryuchkov, Yu. Yu, Timoshnikov, Yu. A.

    Veröffentlicht in Soviet Atomic Energy

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  5. 5
    METHOD OF TREATING SEMICONDUCTING MATERIAL

    METHOD OF TREATING SEMICONDUCTING MATERIAL von POGREBNYAK A.D.,SU, VOROBEV S.A.,SU, KRYUCHKOV YU.YU.,SU, VERIGIN A.A.,SU, KOSHCHEEV V.P.,SU

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