Defects in epitaxial Si-doped GaInP von KRYNICKI, J, ZAIDI, M. A, ZAZOUI, M, BOURGOIN, J. C, DIFORTE-POISSON, M, BRYLINSKI, C, DELAGE, S. L, BLANCK, H

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Evaluation of methods for electrical stimulation of human skeletal muscle in situ von Hultman, E, Sjöholm, H, Jäderholm-Ek, I, Krynicki, J

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Band offset of GaAs-GaInP heterojunctions von Feng, S L, Krynicki, J, Donchev, V, Bourgoin, J C, Forte-Poisson, M Di, Brylinski, C, Delage, S, Blanck, H, Alaya, S

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Electron transport through GaAlAs barriers in GaAs von FENG, S. L, KRYNICKI, J, ZAZOUI, M, BOURGOIN, J. C, BOIS, P, ROSENCHER, E

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Photoelastic Measurement of Residual Thermomechanical Stress in SiC-Reinforced Glass Composites von Krynicki, Joseph W., Nagle, Dennis C., Green Jr, Robert E.

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Discrete failure mode detection in a woven SiC cloth reinforced glass composite von KRYNICKI, J. W, GREEN, R. E, NAGLE, D. C

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Amorphization of p-implanted GaAs von Krynicki, J., Rzewuski, H., Turos, A., Sidor, R.

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Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature von Krynicki, J., Rzewuski, H., Groetzschel, R., Claverie, A.

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Electronic properties of defects created by 1.6 GeV argon ions in silicon von Krynicki, J., Toulemonde, M., Muller, J.C., Siffert, P.

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Crystalline to amorphous transformations in ion implanted GaP von Krynicki, J., Kozanecki, A., Szyszko, W., Groetzschel, R.

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Ionization Assisted Transformations of Defects in Carbon Implanted Silicon von Krynicki, J., Rzewuski, H.

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Deep electronic levels in carbon-implanted silicon von Krynicki, J., Rzewuski, H.

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Recoil Implantation from Sb Thin Films under Ion Bombardment von Paprocki, K., Bryłowska, I., Andrä, W., Krynicki, J.

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Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ions von Krynicki, J., Toulemonde, M., Muller, J. C., Siffert, P.

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Laser annealing of arsenic implanted silicon von Krynicki, J., Suski, J., Ugniewski, S., Grötzschel, R., Klabes, R., Kreissig, U., Rüdiger, J.

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Study of defects in silicon after low energy H+ implantation by DLTS measurements von Krynicki, J., Muller, J. C., Siefert, P., Brylowska, I., Paprocki, K.

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Boron concentration and impurity-to-band activation energy in diamond von Bourgoin, J. C., Krynicki, J., Blanchard, B.

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Defect annealing in phosphorus implanted silicon: A D.L.T.S. study von Krynicki, J., Bourgoin, J. C.

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Ionization assisted annealing of boron implanted silicon von Rzewuski, H., Suski, J., Krynicki, J.

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Ionization enhanced annealing in P and As implanted Si layers von Suski, J., Krynicki, J., Rzewuski, H., Gyulai, J.

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