Radiation induced recombination centers in organic solar cells von Street, R. A., Northrup, J. E., Krusor, B. S.

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Utilizing high resolution and reconfigurable patterns in combination with inkjet printing to produce high performance circuits von Mei, P., Ng, T. N., Lujan, R. A., Schwartz, D. E., Kor, S., Krusor, B. S., Veres, J.

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Printing Methods and Materials for Large-Area Electronic Devices von Chabinyc, M.L., Street, R.A., Wong, W.S., Arias, A.C., Ready, S., Lujan, R.A., Daniel, J.H., Krusor, B., Apte, R.B., Salleo, A.

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Phase separation in InGaN/GaN multiple quantum wells von McCluskey, M. D., Romano, L. T., Krusor, B. S., Bour, D. P., Johnson, N. M., Brennan, S.

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Polycrystalline pentacene thin films for large area electronic applications von Knipp, D, Street, R.A, Krusor, B, Apte, R, Ho, J

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Effect of composition on the band gap of strained InxGa1−xN alloys von McCluskey, M. D., Van de Walle, C. G., Romano, L. T., Krusor, B. S., Johnson, N. M.

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Digitally fabricated multi-modal wireless sensing using a combination of printed sensors and transistors with silicon components von Whiting, G L, Schwartz, D E, Ng, T N, Krusor, B S, Krivacic, R, Pierre, A, Arias, A C, Härting, M, van Buren, D, Short, K L

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Microstructure of GaN epitaxy on SiC using AlN buffer layers von Ponce, F. A., Krusor, B. S., Major, J. S., Plano, W. E., Welch, D. F.

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Structure of GaN films grown by hydride vapor phase epitaxy von Romano, L. T., Krusor, B. S., Molnar, R. J.

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Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates von Bour, D. P., Nickel, N. M., Van de Walle, C. G., Kneissl, M. S., Krusor, B. S., Mei, Ping, Johnson, N. M.

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Interdiffusion of In and Ga in InGaN quantum wells von McCluskey, M. D., Romano, L. T., Krusor, B. S., Johnson, N. M., Suski, T., Jun, J.

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Structural and optical properties of pseudomorphic InxGa1−xN alloys von Romano, L. T., Krusor, B. S., McCluskey, M. D., Bour, D. P., Nauka, K.

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Electronic and structural properties of GaN grown by hydride vapor phase epitaxy von Götz, W., Romano, L. T., Krusor, B. S., Johnson, N. M., Molnar, R. J.

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Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching von Kneissl, M., Bour, D. P., Johnson, N. M., Romano, L. T., Krusor, B. S., Donaldson, R., Walker, J., Dunnrowicz, C.

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Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire von Romano, L. T., Krusor, B. S., Singh, R., Moustakas, T. D.

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Micro-electro-mechanical system fabrication technology applied to large area x-ray image sensor arrays von Daniel, J. H., Krusor, B., Apte, R. B., Mulato, M., Van Schuylenbergh, K., Lau, R., Do, T., Street, R. A., Goredema, A., Boils-Boissier, D. C., Kazmaier, P. M.

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610-nm band AlGaInP single quantum well laser diode von Bour, D.P., Treat, D.W., Beernink, K.J., Krusor, B.S., Geels, R.S., Welch, D.F.

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Comparison of Organic Pulse-Generator Circuits for Ferroelectric Memories Fabricated by All-Additive Printing von Schwartz, David Eric, Ng, Tse Nga, Russo, Beverly, Krusor, Brent, Veres, Janos, Herlogsson, Lars, Bröms, Per, Karlsson, Christer

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Phase separation in annealed InGaN/GaN multiple quantum wells von Romano, L.T, McCluskey, M.D, Krusor, B.S, Bour, D.P, Chua, C, Brennan, S, Yu, K.M

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MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes von Bour, D.P, Kneissl, M, Hofstetter, D, Romano, L.T, McCluskey, M, Van de Walle, C.G, Krusor, B.S, Dunnrowicz, C, Donaldson, R, Walker, J, Johnson, N.M

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