Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN∕GaN heterostructures determined by means of capacitance-voltage characterization von Franssen, G., Plesiewicz, J. A., Dmowski, L. H., Prystawko, P., Suski, T., Krupczyński, W., Jachymek, R., Perlin, P., Leszczyński, M.

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High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy von Skierbiszewski, C., Dybko, K., Knap, W., Siekacz, M., Krupczyński, W., Nowak, G., Boćkowski, M., Łusakowski, J., Wasilewski, Z. R., Maude, D., Suski, T., Porowski, S.

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Hydrostatic pressure dependence of polarization-induced interface charge in Al Ga N ∕ Ga N heterostructures determined by means of capacitance-voltage characterization von Franssen, G., Plesiewicz, J. A., Dmowski, L. H., Prystawko, P., Suski, T., Krupczyński, W., Jachymek, R., Perlin, P., Leszczyński, M.

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High mobility two-dimensional electron gas in Al Ga N ∕ Ga N heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy von Skierbiszewski, C., Dybko, K., Knap, W., Siekacz, M., Krupczyński, W., Nowak, G., Boćkowski, M., Łusakowski, J., Wasilewski, Z. R., Maude, D., Suski, T., Porowski, S.

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Elimination of AlGaN epilayer cracking by spatially patterned AlN mask von Sarzyński, Marcin, Kryśko, Marcin, Targowski, Grzegorz, Czernecki, Robert, Sarzyńska, Agnieszka, Libura, Adam, Krupczyński, Wiktor, Perlin, Piotr, Leszczyński, Michał

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Blue Laser on High N 2 Pressure-Grown Bulk GaN von Grzegory, I., Boćkowski, M., Krukowski, S., Łucznik, B., Wróblewski, M., Weyher, J.L., Leszczyński, M., Prystawko, P., Czernecki, R., Lehnert, J., Nowak, G., Perlin, P., Teisseyre, H., Purgał, W., Krupczyński, W., Suski, T., Dmowski, L.H., Litwin-Staszewska, E., Skierbiszewski, C., Łepkowski, S., Porowski, S.

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High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN von Siekacz, M., Dybko, K., Skierbiszewski, C., Knap, W., Wasilewski, Z., Maude, D., Łusakowski, J., Krupczyński, W., Nowak, G., Boćkowski, M., Porowski, S.

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Low dislocation density, high power InGaN laser diodes von Perlin, Piotr, Leszczynski, M, Prystawko, P, Wisniewski, P, Czernetzki, R, Skierbiszewski, C, Nowak, G, Purgal, W, Weyher, J L, Kamler, G, Borysiuk, J, Krysko, M, Sarzynski, M, Suski, T, Litwin-Staszewska, E, Dmowski, L, Franssen, G, Grzanka, S, Swietlik, T

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Transmission of interconnection information for next generation cordless telephone networks von STUGLIK, MARK S, PATSIOKAS, STELIOS J, KRUPCZYNSKI, FELIX W, ANTILLA, GARY A, JOHNSON, BRIAN K, LAMBRECHT, FRANK E

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USER FEATURES FOR NEXT GENERATION CORDLESS TELEPHONE NETWORKS von ANTILLA, GARY A, PATSIOKAS, STELIOS J, LAMBRECHT, FRANK E, STUGLIK, MARK S, JOHNSON, BRIAN K. A, KRUPCZYNSKI, FELIX W

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ANVAENDARKARAKTERISTIKA FOER NAESTA GENERATIONS SNOERLOESA TELEFONNAET von ANTILLA, GARY A, PATSIOKAS, STELIOS J, LAMBRECHT, FRANK E, JOHNSON, BRIAN K.A, STUGLIK, MARK, KRUPCZYNSKI, FELIX W

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ANVAENDARKARAKTERISTIKA FOER NAESTA GENERATIONS SNOERLOESA TELEFONNAET von ANTILLA, GARY A, PATSIOKAS, STELIOS J, LAMBRECHT, FRANK E, JOHNSON, BRIAN K.A, STUGLIK, MARK, KRUPCZYNSKI, FELIX W

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