Impact of intramolecular twisting and exciton migration on emission efficiency of multifunctional fluorene-benzothiadiazole-carbazole compounds von Karpicz, R., Puzinas, S., Krotkus, S., Kazlauskas, K., Jursenas, S., Grazulevicius, J. V., Grigalevicius, S., Gulbinas, V.

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Pyrenyl-Functionalized Fluorene and Carbazole Derivatives as Blue Light Emitters von Krotkus, S, Kazlauskas, K, Miasojedovas, A, Gruodis, A, Tomkeviciene, A, Grazulevicius, J. V, Jursenas, S

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Impact of doping on carrier recombination and stimulated emission in highly excited GaN:Mg von Aleksiejūnas, R., Krotkus, S., Nargelas, S., Miasojedovas, S., Juršėnas, S.

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High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates von MIASOJEDOVAS, S, MAUDER, C, KROTKUS, S, KADYS, A, MALINAUSKAS, T, JARASIUNAS, K, HEUKEN, M, KALISCH, H, VESCAN, A

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Properties of truly bulk GaN monocrystals grown by ammonothermal method von Dwiliński, Robert, Doradziński, Roman, Garczyński, Jerzy, Sierzputowski, Leszek, Kucharski, Robert, Rudziński, Mariusz, Zając, Marcin, Kudrawiec, Robert

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Distribution of relaxation times of relaxors: comparison with dipolar glasses von Banys, Juras, Grigalaitis, Robertas, Mikonis, Andrejus, Macutkevic, Jan, Keburis, Povilas

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Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters von Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.

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Electrical properties of nitrogen-related defects in n-type GaAsN grown by molecular-beam epitaxy von Shafi, M., Mari, R.H., Henini, M., Taylor, D., Hopkinson, M.

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Structural perfection of InGaN layers and its relation to photoluminescence von Liliental-Weber, Z., Yu, K. M., Hawkridge, M., Bedair, S., Berman, A.E., Emara, A., Khanal, D. R., Wu, J., Domagala, J., Bak-Misiuk, J.

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Ultrafast decay of non-equilibrium (hot) phonons in GaN-based 2DEG channels von Matulionis, Arvydas

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Field effect transistors for terahertz imaging von Knap, Wojciech, Valušis, Gintaras, Łusakowski, Jerzy, Coquillat, Dominique, Teppe, Frederic, Dyakonova, Nina, Nadar, Salman, Karpierz, Krzysztof, Bialek, Marcin, Seliuta, Dalius, Kašalynas, Irmantas, Fatimy, Abdel El

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Mn configuration in III-V semiconductors and its influence on electric transport and semiconductor magnetism von Wolos, Agnieszka, Piersa, Miroslaw, Strzelecka, Grazyna, Korona, Krzysztof P., Hruban, Andrzej, Kaminska, Maria

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Chemical composition of GaAs-nitride nanolayers formed by implantation von Mikoushkin, V. M., Gordeev, Yu. S., Nikonov, S. Yu, Solonitsina, A. P., Zhuravleva, A. A., Brzhezinskaya, M. M.

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Terahertz imaging using high electron mobility transistors as plasma wave detectors von Nadar, S., Coquillat, D., Sakowicz, M., Videlier, H., Teppe, F., Dyakonova, N., Knap, W., Peiris, J.-M., Lyonnet, J., Seliuta, D., Kasalynas, I., Valušis, G., Madjour, K., Théron, D., Gaquière, C., Poisson, M.-A.

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Photoluminescence in Er-doped AgGaS2-GeS2 glasses von Halyan, V. V., Kevshyn, A. H., Kogut, Yu. M., Davydyuk, G. Ye, Shevchuk, M. V., Kažukauskas, V., Ziminskij, A.

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Optical absorption of rutile SnO2 and TiO2 von Thomazi, Fabiano, Roman, Lucimara Stolz, Silva, Antonio Ferreira da, Persson, Clas

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Optical and electrical properties of Nd-doped BiFeO3 thin films and heterostructures von Vengalis, Bonifacas, Devenson, Jelena, Oginskis, Antanas K., Lisauskas, Vaclovas, Anisimovas, Fiodoras, Butkute, Renata, Dapkus, Leonas

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Surface morphology of indium phosphide grown on silicon by nano-epitaxial lateral overgrowth von Junesand, Carl, Olsson, Fredrik, Xiang, Yu, Gau, Ming-Horng, Lourdudoss, Sebastian

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Phase transitions in modified Na1/2Bi1/2TiO3-SrTiO3 solid solutions von Birks, Eriks, Dunce, Marija, Antonova, Maija, Sternberg, Andris

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Coloration of zinc oxide crystals originating from particle plasmons von Irmscher, K., Albrecht, M., Heimbrodt, B., Naumann, M., Remmele, T., Schulz, D., Schulz, T., Fornari, R.

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