Understanding and Control of Stress at Si-SiO2 Interface von Vitusevich, Svetlana, Kropman, Daniel, Medvids, Arturs, Mikli, Valdek, Seeman, Viktor, Onufrijevs, Pavels

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The effect of ultrasound on the Si-SiO sub(2) system von Kropman, Daniel, Dolgov, S

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The effect of ultrasound on the Si‐SiO 2 system von Kropman, Daniel, Dolgov, S.

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Retraction: Stress Relaxation Mechanism in the Si‐SiO2 System and Its Influence on the Interface Properties von Kropman, Daniel, Seeman, Viktor, Dolgov, Sergei, Heinmaa, Ivo, Medvid, Artur

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Retraction: Stress Relaxation Mechanism in the Si‐SiO 2 System and Its Influence on the Interface Properties von Kropman, Daniel, Seeman, Viktor, Dolgov, Sergei, Heinmaa, Ivo, Medvid, Artur

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Stress relaxation mechanism in the Si‐SiO 2 system and its influence on the interface properties von Kropman, Daniel, Seeman, Viktor, Dolgov, Sergei, Heinmaa, Ivo, Medvid, Artur

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Stress relaxation mechanism in the Si-SiO sub(2) system and its influence on the interface properties von Kropman, Daniel, Seeman, Viktor, Dolgov, Sergei, Heinmaa, Ivo, Medvid, Artur

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Stress relaxation mechanism in the Si-SiO2 system and its influence on the interface properties von Kropman, Daniel, Seeman, Viktor, Dolgov, Sergei, Heinmaa, Ivo, Medvid, Artur

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The effect of ultrasound on the Si-SiO2 system von Kropman, Daniel, Dolgov, S.

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Effect of Ultrasonic Treatment on the Defect Structure of the Si-SiO2 System von Dolgov, Sergei, Onufrijevs, Pavel, Kropman, Daniel, Dauksta, Edvins

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Interaction of point defects with impurities in the Si‐SiO 2 system and its influence on the interface properties von Kropman, Daniel, Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Laas, Tõnu, Londos, Charalampos A.

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Point Defects Generation Kinetics in the Si-SiO2 System and its Influence on the Interface Properties von Londos, Charalamos A., Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Kropman, Daniel

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Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties von Mellikov, Enn, Laas, Tõnu, Londos, Charalampos A., Kärner, Tiit, Misiuk, Andrzej, Heinmaa, Ivo, Kropman, Daniel

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Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties von Kropman, Daniel, Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Laas, Tõnu, Londos, Charalampos A.

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Stress Relaxation Mechanism by Strain in the Si-SiO2 System and its Influence on the Interface Properties von Mellikov, Enn, Dauksta, Edvins, Laas, Tõnu, Onufrijevs, Pavels, Medvid, Arthur, Kärner, Tiit, Kropman, Daniel

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Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface von Ozerov, M., Medvid, Arthur, Cizmar, E., Kärner, Tiit, Skorupa, Wolfgang, Prucnal, S., Kropman, Daniel, Zvyagin, S., Mellikov, E., Lott, K., Woznitsa, J., Heinmaa, Ivo, Laas, Tony

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Dedicated in the Memory of Professor Ulrich Gösele. Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties von Kropman, Daniel, Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Londos, C.A.

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Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface Properties von Ugaste, Ü., Mellikov, E., Medvid, Arthur, Kärner, Tiit, Abru, U., Laas, Tony, Heinmaa, Ivo, Kropman, Daniel

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Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties von Samoson, A., Mellikov, E., Medvid, Arthur, Kärner, Tiit, Kauk, M., Ugaste, U., Abru, U., Heinmaa, Ivo, Kropman, Daniel

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Impurity Gettering Investigation in the Si-SiO2 System von Kärner, Tiit, Tambek, L., Poll, V., Strik, M., Abru, U., Kropman, Daniel

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