Ductile damage parameters and far field J-integral for high hardening steel von Krishnan, S.A, Sasikala, G, Moitra, A, Albert, S.K, Bhaduri, A.K

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Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- k Stacks von Kerber, A., Krishnan, S.A., Cartier, E.A.

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Effect of specimen size in determining ductile to brittle transition temperature von Moitra, A., Krishnan, S. A., Sasikala, G., Bhaduri, A. K., Jayakumar, T.

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Impact of negative bias temperature instability on digital circuit reliability von Reddy, V., Krishnan, A.T., Marshall, A., Rodriguez, J., Natarajan, S., Rost, T., Krishnan, S.

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Prediction of high temperature flow stress in 9Cr–1Mo ferritic steel during hot compression von Krishnan, S.A., Phaniraj, C., Ravishankar, C., Bhaduri, A.K., Sivaprasad, P.V.

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Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility von Kirsch, P. D., Quevedo-Lopez, M. A., Li, H. -J., Senzaki, Y., Peterson, J. J., Song, S. C., Krishnan, S. A., Moumen, N., Barnett, J., Bersuker, G., Hung, P. Y., Lee, B. H., Lafford, T., Wang, Q., Gay, D., Ekerdt, J. G.

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Metal Gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer von OK, Injo, KIM, Hyoung-Sub, LEE, Jack C, MANHONG ZHANG, KANG, Chang-Yong, SE JONG RHEE, CHOI, Changhwan, KRISHNAN, Siddarth A, LEE, Tackhwi, FENG ZHU, THAREJA, Gaurav

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Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability von Quevedo-Lopez, M. A., Krishnan, S. A., Kirsch, P. D., Pant, G., Gnade, B. E., Wallace, R. M.

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Bias-temperature instabilities of polysilicon gate HfO2 MOSFETs von Onishi, K, Choi, Rino, Kang, Chang Seok, Cho, Hag-Ju, Kim, Young Hee, Nieh, R.E, Han, Jeong, Krishnan, S.A, Akbar, M.S, Lee, J.C

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Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing von Onishi, K, Kang, Chang Seok, Choi, Rino, Cho, Hag-Ju, Gopalan, S, Nieh, R.E, Krishnan, S.A, Lee, J.C

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Tensile properties of shielded metal arc welded dissimilar joints of nuclear grade ferritic steel and austenitic stainless steel von Karthick, K., Malarvizhi, S., Balasubramanian, V., Krishnan, S.A., Sasikala, G., Albert, Shaju K.

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Hafnium Titanate bilayer structure multimetal dielectric nMOSCAPs von Se Jong Rhee, Feng Zhu, Hyoung-Sub Kim, Chang Hwan Choi, Chang Yong Kang, Manhong Zhang, Tackhwi Lee, Ok, I., Krishnan, S.A., Lee, J.C.

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Improved electrical and material characteristics of HfTaO gate dielectrics with high crystallization temperature von Zhang, M. H., Rhee, S. J., Kang, C. Y., Choi, C. H., Akbar, M. S., Krishnan, S. A., Lee, T., Ok, I. J., Zhu, F., Kim, H. S., Lee, Jack C.

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Aggressively scaled ultrathin undoped HfO2 gate dielectric (EOT < 0.7 nm) with TaN gate electrode using engineered interface layer von CHOI, Changhwan, KANG, Chang-Yong, LEE, Jack C, SE JONG RHEE, AKBAR, Mohammad Shahariar, KRISHNAN, Siddarth A, MANHONG ZHANG, KIM, Hyoung-Sub, LEE, Tackhwi, OK, Injo, FENG ZHU

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Positive bias temperature instability effects of Hf-based nMOSFETs with various nitrogen and silicon profiles von Changhwan Choi, Chang-Seok Kang, Chang Yong Kang, Se Jong Rhee, Akbar, M.S., Krishnan, S.A., Manhong Zhang, Lee, J.C.

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A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique von Akbar, M.S., Choi, C.H., Rhee, S.J., Krishnan, S.A., Kang, C.Y., Zhang, M.H., Lee, T., Ok, I.J., Zhu, F., Kim, H.-S., Lee, J.C.

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Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides von Akbar, M.S., Changhwan Choi, Se Jong Rhee, Krishnan, S.A., Chang Yong Kang, Man Hong Zhang, Tackhwi Lee, Ok, I., Feng Zhu, Hyoung-Sub Kim, Lee, J.C.

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Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO2 transistor von Rhee, Se Jong, Zhu, Feng, Kim, Hyoung-Sub, Kang, Chang Yong, Choi, Chang Hwan, Zhang, Manhong, Lee, Tackhwi, Ok, Injo, Krishnan, Siddarth A., Lee, Jack C.

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Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y2O3/HfO2 gate dielectric von FENG ZHU, SE JONG RHEE, LEE, Jack C, CHANG YONG KANG, CHANG HWAN CHOI, AKBAR, Mohammad S, KRISHNAN, Siddarth A, MANHONG ZHANG, KIM, Hyoung-Sub, LEE, Tackwhi, OK, Injo

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Metal gate-HfO sub(2) MOS structures on GaAs substrate with and without Si interlayer von Ok, I, Kim, Hyoung-sub, Zhang, Manhong, Kang, Chang-Yong, Rhee, Se Jong, Choi, Changhwan, Krishnan, SA, Lee, Tackhwi, Zhu, Feng, Thareja, G, Lee, J C

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