Signatures of the Optical Stark Effect on Entangled Photon Pairs from Resonantly Pumped Quantum Dots von Basso Basset, F., Rota, M. B., Beccaceci, M., Krieger, T. M., Buchinger, Q., Neuwirth, J., Huet, H., Stroj, S., Covre da Silva, S. F., Ronco, G., Schimpf, C., Höfling, S., Huber-Loyola, T., Rastelli, A., Trotta, R.

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Degradation of aspartame in yogurt related to microbial growth von KELLER, S. E., NEWBERG, S. S., KRIEGER, T. M., SHAZER, W. H.

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Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates von Gogova, Daniela, Virojanadara, Chariya, Syväjärvi, Mikael, Larsson, Karin, Siche, D., Yakimova, Rositza, Johansson, Leif I.

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Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates von Wasyluk, Joanna, Perova, Tatiana S., Feoktistov, Nikolay A., Grudinkin, Sergey A., Kukushkin, Sergey A., Osipov, Andrey V.

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Quasi-Freestanding Graphene on SiC(0001) von Röhrl, Jonas, Ostler, Markus, Jobst, Johannes, Seyller, Thomas, Hundhausen, Martin, Weber, Heiko B., Speck, Florian, Ley, Lothar, Waldmann, Daniel

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Theory of Neutral Divacancy in SiC: A Defect for Spintronics von Gällström, Andreas, Son, Nguyen Tien, Gali, Adam, Janzén, Erik

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High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt von Seki, Akinori, Fujiwara, Y., Ishii, T., Saitoh, Hiroaki, Daikoku, H., Kawai, Yoichiro, Danno, Katsunori, Sakamoto, H.

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Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs von Hull, Brett A., Scozzie, Charles, Cheng, L., Das, Mrinal K., Geil, Bruce, Agarwal, Anant K., Lelis, Aivars J., Ryu, Sei Hyung, Dhar, Sarit, Zhang, Qing Chun Jon, Richmond, Jim, Palmour, John W.

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Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing von Shimozato, Atsushi, Senzaki, Junji, Arai, Kazuo, Suzuki, Takuma, Fukuda, Kenji, Okumura, Hajime

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6.5 kV SiC PiN Diodes with Improved Forward Characteristics von Sommer, R., Peters, Dethard, Bartsch, Wolfgang, Thomas, Bernd

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Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations von Tsuji, Takashi, Yonezawa, Yoshiyuki, Tawara, T., Tanuma, Ryohei, Iwamuro, Noriyuki, Kobayashi, S., Fukuda, Kenji, Okumura, Hajime, Yurimoto, H., Matsuhata, Hirofumi, Kosaka, K., Arai, Kazuo

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Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration von Matsumoto, Tsubasa, Nishizawa, Shin Ichi, Yamasaki, Satoshi

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Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle von Kojima, Kazutoshi, Fukuda, Kenji, Okumura, Hajime, Kato, Makoto, Takatsuka, Akio, Harada, Shinsuke, Ito, Sachiko

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NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications von Grieb, Michael, Le-Huu, Martin, Schrey, Frederik F., Haeublein, Volker, Bauer, Anton J., Frey, L., Schmitt, H., Ryssel, Heiner

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Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates von Piluso, Nicolò, La Via, Francesco, Locke, Christopher, Severino, Andrea, Saddow, Stephen E., Anzalone, Ruggero, Carballo, J., Volinsky, A.A., D'Arrigo, Giuseppe

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Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers von Hoshino, Norihiro, Ito, Masahiko, Miyazawa, Tetsuya, Tsuchida, Hidekazu, Nagano, Masahiro, Kamata, Isaho

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Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density von Zhang, Yu, Choi, Gloria, Sanchez, Edward, Drachev, Roman, Dudley, Michael, Byrapa, Sha Yan, Hansen, Darren M., Loboda, Mark J., Raghothamachar, Balaji, Zhang, Ning

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High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor von Kitahata, Hiroya, Stein, René A., Thomas, Bernd, Wehrhahn-Kilian, Larissa, Rosberg, Jonas, Hecht, Christian, Wischmeyer, Frank

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600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration von Veliadis, Victor, Ha, H.C., Scozzie, Charles, Urciuoli, Damian, Hearne, Harold, Howell, R.

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Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface von Beljakowa, Svetlana, Nanen, Yuichiro, Zippelius, Bernd, Krieger, M., Bauer, Anton J., Afanas'ev, Valeri V., Kimoto, Tsunenobu, Pensl, Gerhard

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