Silicon carbide UV photodiodes von Brown, D.M., Downey, E.T., Ghezzo, M., Kretchmer, J.W., Saia, R.J., Liu, Y.S., Edmond, J.A., Gati, G., Pimbley, J.M., Schneider, W.E.

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Silicon carbide photodiode sensor for combustion control von Brown, D.M., Fedison, J.B., Hibshman, J.R., Kretchmer, J.W., Lombardo, L., Matocha, K.S., Sandvik, P.M.

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Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers von Fedison, J.B., Ramungul, N., Chow, T.P., Ghezzo, M., Kretchmer, J.W.

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Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes von Arthur, Steve, Wang, Shao Ping, Stahlbush, Robert E., Rowland, L.B., Fedison, Jeffery B., Kretchmer, James W.

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4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal von Arthur, Steve, Klinger, R.L., Rowland, L.B., Kretchmer, James W., Downey, E.T., Matocha, Kevin, Cowen, Chris S., Tucker, Jesse B., Garrett, Jerome L., Fedison, Jeffery B., Peters, H.C.

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Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET von Los, A.V., McDaniel, B.T., Smith, C.E., Mazzola, Michael S., Rowland, L.B., Kretchmer, James W., Kajfez, D., Casady, Jeff B.

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Progress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit Technology von Nielsen, Matthew, Krishnamurthy, Nicole, Ghezzo, Mario, Brown, Dale, McGrath, Don, Kretchmer, James W.

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Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform von Khemka, V., Chow, T. Paul, Ghezzo, Mario, Ramungul, Nudjarin, Kretchmer, James W.

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Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors von Chow, T. Paul, Nielsen, M.C., Ghezzo, Mario, Fedison, Jeffery B., Kretchmer, James W.

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Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers von Khemka, V., Chow, T. Paul, Ramungul, Nudjarin, Kretchmer, James W., Li, Z., Ghezzo, Mario, Elasser, Ahmed, Fedison, Jeffery B.

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Ion Implantation Doping in SiC and its Device Applications von Edwards, Arthur H., Papanicolaou, N., Rao, Mulpuri V., Holland, O.W., Kelner, G., Kretchmer, James W., Ghezzo, Mario, Gardner, J.

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AVALANCHE PHOTODIODE FOR USE IN HARSH ENVIRONMENTS von SANDVIK, PETER M, BROWN, DALE M, MATOCHA, KEVIN S, KRETCHMER, JAMES W, ARTHUR, STEPHEN D

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Method of fabricating a MESFET with a sloped MESA structure von ZHANG AN-PING, ROWLAND LARRY B, TUCKER JESSE, KRETCHMER JAMES W, KAMINSKY EDMUND B

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Method of fabricating a MESFET with a sloped MESA structure von Zhang, An-Ping, Rowland, Larry B, Kretchmer, James W, Tucker, Jesse, Kaminsky, Edmund B

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Avalanche photodiode for use in harsh environments von SANDVIK, PETER M, BROWN, DALE M, MATOCHA, KEVIN S, KRETCHMER, JAMES W, ARTHUR, STEPHEN D

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SiC metal semiconductor field-effect transistors and methods for producing same von ZHANG AN-PING, ROWLAND LARRY B, TUCKER JESSE, KRETCHMER JAMES W, KAMINSKY EDMUND B

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SiC metal semiconductor field-effect transistor von ZHANG AN-PING, ROWLAND LARRY B, TUCKER JESSE, KRETCHMER JAMES W, KAMINSKY EDMUND B

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SiC metal semiconductor field-effect transistor von Zhang, An-Ping, Rowland, Larry B, Kretchmer, James W, Tucker, Jesse, Kaminsky, Edmund B

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SIC metal semiconductor field-effect transistors and methods for producing same von ZHANG AN-PING, ROWLAND LARRY B, TUCKER JESSE, KRETCHMER JAMES W, KAMINSKY EDMUND B

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Detection system including avalanche photodiode for use in harsh environments von ARTHUR STEPHEN D, MATOCHA KEVIN S, KRETCHMER JAMES W, SANDVIK PETER M, BROWN DALE M

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