Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn von Romaka, V. A., Rogl, P., Romaka, V. V., Stadnyk, Yu. V., Hlil, E. K., Krajovskii, V. Ya, Horyn, A. M.

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Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity von Romaka, V. A., Rogl, P., Stadnyk, Yu. V., Romaka, V. V., Hlil, E. K., Krajovskii, V. Ya, Horyn, A. M.

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Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped von Romaka, V. A., Rogl, P., Romaka, V. V., Kaczorowski, D., Stadnyk, Yu. V., Korzh, R. O., Krayovskyy, V. Ya, Kovbasyuk, T. M.

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