Defect-induced redistribution of Fe- or Ti-implanted and annealed GaAs, InAs, GaP, in InP von ULLRICH, H, KNECHT, A, BIMBERG, D, KRÄUTLE, H, SCHLAAK, W

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Secondary ion mass spectroscopy study of Zn or Cd implanted and rapid thermally annealed Pd/Ge contacts to p -In0.53Ga0.47As von Ressel, P., Strusny, H., Trapp, M., Kräutle, H., Fritzsche, D.

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Damage characterisation of InP after reactive ion etching using the low-frequency noise measurement technique von Gottwald, P, Kräutle, H, Szentpáli, B, Kincses, Zs, Hartnagel, H.L

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Low temperature deposition of SiO2 and PSG using SiH4, N2O and phosphorous vapour for damage-free passivation of InP-based PIN diodes by plasma- and photo-assisted LPCVD von RIEMENSCHNEIDER, R, DASGUPTA, N, SCHÜTZ, R, HARTNAGEL, H. L, KRÄUTLE, H

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Annealing behavior of Si implanted InP von KRÄUTLE, H

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Waveguide-integrated InP-InGaAs-InAlGaAs MSM photodetector with very-high vertical-coupling efficiency von Kollakowski, S., Bottcher, E.H., Lemm, C., Strittmatter, A., Bimberg, D., Krautle, H.

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Effect of argon ion implantation dose on silicon Schottky barrier characteristics von ASHOK, S, KRÄUTLE, H, BENEKING, H

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Passivation of InP for Optoelectronics von Kräutle, H.

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Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As von Ressel, P., Österle, W., Urban, I., Dörfel, I., Klein, A., Vogel, K., Kräutle, H.

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Redistribution of Fe and Ti implanted into InP von ULLRICH, H, KNECHT, A, BIMBERG, D, KRAUTLE, H, SCHLAAK, W

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Measurement of low resistive ohmic contacts on semiconductors von Woelk, E.G., Krautle, H., Beneking, H.

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Low temperature deposition of SiO 2 and PSG using SiH 4, N 2O and phosphorous vapour for damage-free passivation of InP-based PIN diodes by plasma- and photo-assisted LPCVD von Riemenschneider, R., DasGupta, N., Schütz, R., Hartnagel, H.L., Kräutle, H.

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Ohmic contacts on n- and p-layers of GaAs using laser-induced diffusion von Kräutle, H., Wachenschwanz, D.

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Ion implantation of zirconium and hafnium in InP and GaAs von Knecht, A., Kuttler, M., Scheffler, H., Wolf, T., Bimberg, D., Kräutle, H.

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Heat treatment induced redistribution of vanadium in semi-insulating GaAs:V von KÜTT, W, BIMBERG, D, MAIER, M, KRÄUTLE, H, KÖHL, F, BAUSER, E

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Investigations on low temperature mo-cvd growth of GaAs von Kräutle, H., Roehle, H., Escobosa, A., Beneking, H.

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Low temperature growth of MOCVD GaAs layers at atmospheric pressure von Escobosa, A., Kräutle, H., Beneking, H.

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Comparison of ion implanted Be and Cd as p-type dopants in Ga0.47In0.53As von VESCAN, L, SELDERS, J, MAIER, M, KRÄUTLE, H, BENEKING, H

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Redistribution of Cr in GaAs: Cr and of V in GaAs: V after implantation of Si, Be, or B and annealing in a controlled atmosphere von KÜTT, W, BIMBERG, D, MAIER, M, KRÄUTLE, H, KÖHL, F, TOMZIG, E

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Effect of dual implantation on the amphoteric behavior of group IV ion implanted GaAs von Kräutle, H.

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