High energy particles from the six-meter synchrocyclotron and their utilization (review article) von Dzhelepov, V. P., Dmitrievsky, V. P., Katyshev, V. S., Kozodaev, M. S., Meshcheryakov, M. G., Tarakanov, K. I., Chestnoi, A. V.

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Aleksandr Ovseevich Vaĭsenberg (Obituary) von Abov, Yurii G, Vladimirskiĭ, V V, Ginzburg, Vitalii L, Gol'din, L L, Daĭon, M I, Kobzarev, I Yu, Kozodaev, M S, Nikitin, S Ya, Okun', Lev B, Spivak, P E, Smirtinskiĭ, V A

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Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films von Chernikova, Anna G, Kozodaev, Maxim G, Negrov, Dmitry V, Korostylev, Evgeny V, Park, Min Hyuk, Schroeder, Uwe, Hwang, Cheol Seong, Markeev, Andrey M

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Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping von Kozodaev, Maxim G., Chernikova, Anna G., Korostylev, Evgeny V., Park, Min Hyuk, Khakimov, Roman R., Hwang, Cheol S., Markeev, Andrey M.

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PULSE SHAPER von KOZODAEV ALEKSANDR M,SU, SKACHKOV VLADIMIR S,SU, STASEVICH YURIJ B,SU

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Ferroelectric Second-Order Memristor von Mikheev, Vitalii, Chouprik, Anastasia, Lebedinskii, Yury, Zarubin, Sergei, Matveyev, Yury, Kondratyuk, Ekaterina, Kozodaev, Maxim G, Markeev, Andrey M, Zenkevich, Andrei, Negrov, Dmitrii

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CURRENT PULSER von KOZODAEV ALEKSANDR M,SU, SKACHKOV VLADIMIR S,SU, STASEVICH YURIJ B,SU

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Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks von Chernikova, A. G., Kuzmichev, D. S., Negrov, D. V., Kozodaev, M. G., Polyakov, S. N., Markeev, A. M.

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La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors von Kozodaev, Maxim G., Chernikova, Anna G., Khakimov, Roman R., Park, Min Hyuk, Markeev, Andrey M., Hwang, Cheol Seong

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Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions von Chaudhary, P., Buragohain, P., Kozodaev, M., Zarubin, S., Mikheev, V., Chouprik, A., Lipatov, A., Sinitskii, A., Zenkevich, A., Gruverman, A.

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Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition von Kozodaev, M. G., Chernikova, A. G., Korostylev, E. V., Park, M. H., Schroeder, U., Hwang, C. S., Markeev, A. M.

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Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices von Chouprik, Anastasia, Kondratyuk, Ekaterina, Mikheev, Vitalii, Matveyev, Yury, Spiridonov, Maxim, Chernikova, Anna, Kozodaev, Maxim G., Markeev, Andrey M., Zenkevich, Andrei, Negrov, Dmitrii

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CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems von Koroleva, Aleksandra A., Kuzmichev, Dmitry S., Kozodaev, Maxim G., Zabrosaev, Ivan V., Korostylev, Evgeny V., Markeev, Andrey M.

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Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta2O5/Ta and TiN/HfO2/Ta2O5/Ta Stacks von Kuzmichev, Dmitry S., Chernikova, Anna G., Kozodaev, Maxim G., Markeev, Andrey M.

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Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors von Chernikova, Anna G., Kozodaev, Maxim G., Khakimov, Roman R., Polyakov, Sergey N., Markeev, A. M.

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Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films von Chernikova, A., Kozodaev, M., Markeev, A., Matveev, Yu, Negrov, D., Orlov, O.

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Interface engineering for enhancement of the analog properties of W/WO3− x /HfO2/Pd resistance switched structures von Koroleva, Aleksandra A, Kozodaev, Maxim G, Lebedinskii, Yuri Y, Markeev, Andrey M

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Influence of Reducing Agent on Properties of Thin WS2 Nanosheets Prepared by Sulfurization of Atomic Layer-Deposited WO3 von Kozodaev, Maxim G, Slavich, Aleksandr S, Romanov, Roman I, Zarubin, Sergey S, Markeev, Andrey M

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Microplotter printing of planar solid electrolytes in the CeO2–Y2O3 system von Simonenko, Tatiana L., Simonenko, Nikolay P., Gorobtsov, Philipp Yu, Vlasov, Ivan S., Solovey, Valentin R., Shelaev, Artem V., Simonenko, Elizaveta P., Glumov, Oleg V., Melnikova, Natalia A., Kozodaev, Maxim G., Markeev, Andrey M., Lizunova, Anna A., Volkov, Ivan A., Sevastyanov, Vladimir G., Kuznetsov, Nikolay T.

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Radical-Enhanced Atomic Layer Deposition of a Tungsten Oxide Film with the Tunable Oxygen Vacancy Concentration von Romanov, Roman I, Kozodaev, Maxim G, Lebedinskii, Yury Y, Perevalov, Timofey V, Slavich, Aleksandr S, Hwang, Cheol Seong, Markeev, Andrey M

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