Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation von Lebedev, Alexander A., Kozlovski, Vitali V., Davydovskaya, Klavdia S., Levinshtein, Mikhail E.

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Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures von Levinshtein, Michael E., Lebedev, Alexander A., Kozlovski, Vitali V., Malevsky, Dmitriy A., Kuzmin, Roman A., Oganesyan, Gagik A.

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Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide von Lebedev, Alexander A, Kozlovski, Vitali V, Davydovskaya, Klavdia S, Kuzmin, Roman A, Levinshtein, Mikhail E, Strel'chuk, Anatolii M

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Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon von Makarenko, Leonid F., Lastovski, Stanislav B., Yakushevich, Hanna S., Gaubas, Eugenijus, Pavlov, Jevgenij, Kozlovski, Vitali V., Moll, Michael, Pintilie, Ioana

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Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes von Lebedev, Alexander A., Kozlovski, Vitali V., Levinshtein, Michael E., Ivanov, Anton E., Davydovskaya, Klava S.

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Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons von Sleptsuk, Natalja, Korolkov, Oleg, Toompuu, Jana, Kozlovski, Vitalii V., Lebedev, Alexander A.

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Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing von Kozlovski, Vitalii V., Korolkov, Oleg, Toompuu, Jana, Lebedev, Alexander A., Rang, Toomas, Sleptsuk, Natalja

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Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature von Sleptsuk, Natalja, Lebedev, Alexander A., Davydovskaya, Klavdia S., Korolkov, Oleg, Toompuu, Jana, Kozlovski, Vitalii V.

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Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures von Davydovskaya, Klavdia S., Kozlovski, Vitalii V., Strel'chuk, Anatoly M., Yakimenko, Andrey N., Lebedev, Alexander A.

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Doping of 6H–SiC pn structures by proton irradiation von Strel’chuk, Anatoly M, Lebedev, Alexandre A, Kozlovski, Vitali V, Savkina, Natali S, Davydov, Denis V, Solov’ev, Viktor V, Rastegaeva, Marina G

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Studies of the effect of proton irradiation on 6H-SiC pn junction properties von Lebedev, Alexandre A., Strel’chuk, Anatoly M., Kozlovski, Vitali V., Savkina, Natalia.S., Davydov, Denis V., Solov’ev, Viktor V.

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The processes of defect formation and conductivity compensation of n-GaAs:Yb due to electron irradiation von Kozlovski, Vitali V., Zakharenkov, Leonid F.

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The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range von Kozlovski Vitali, Lebedev Alexander, Kuzmin Roman, Malevsky Dmitry, Levinshtein Mikhail, Oganisyan Gagik

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Effect Irradiation with 15 MeV Protons on Properties of 4H- SiC UV Detectors von Zabrodski, Vladimir, Kozlovski, Vitalii V., Levina, Svetlana, Shvarts, Maxim Z., Nikolaev, Andrei, Kalinina, Evgenia V., Lebedev, Alexander A.

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Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons von Kozlovski, Vitalii V., Strel'chuk, Anatoly M., Nikitina, Irina P., Zabrodski, Vladimir, Lebedev, Alexander A., Kalinina, Evgenia V.

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SiC Schottky diode rectifier bridge represented as diffusion-welded stack von Korolkov, Oleg, Kozlovski, Vitali, Lebedev, Alexander, Land, Raul, Sleptsuk, Natalja, Toompuu, Jana, Rang, Toomas

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