Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes von Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.

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Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation von Lebedev, Alexander A., Kozlovski, Vitali V., Davydovskaya, Klavdia S., Levinshtein, Mikhail E.

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Model for conductivity compensation of moderately doped n- and p-4H-SiC by high-energy electron bombardment von Kozlovski, V. V., Lebedev, A. A., Bogdanova, E. V.

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Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier von Kozlovski, Vitalii V., Strel'chuk, Anatoly M., Lebedev, Alexander A.

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Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range von Lebedev, A. A., Kozlovski, V. V., Levinshtein, M. E., Malevsky, D. A., Kuzmin, R. A.

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Persistent Relaxation Processes in Proton-Irradiated 4H-SiC von Lebedev, A. A., Malevsky, D. A., Kozlovski, V. V., Levinshtein, M. E.

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Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons von Lebedev, Alexander A., Korolkov, Oleg, Sleptsuk, Natalja, Toompuu, Jana, Kozlovski, Vitalii V.

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Local Diagnostics of Spin Defects in Irradiated SiC Schottky Diodes von Likhachev, K. V., Skoromokhov, A. M., Uchaev, M. V., Uspenskaya, Yu. A., Kozlovski, V. V., Levinshtein, M. E., Eliseev, I. A., Smirnov, A. N., Kramushchenko, D. D., Babunts, R. A., Baranov, P. G.

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Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature von Lebedev, A. A., Kozlovski, V. V., Levinshtein, M. E., Malevsky, D. A., Oganesyan, G. A., Strel’chuk, A. M., Davydovskaya, K. S.

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Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes von Lebedev, A. A., Sakharov, A. V., Kozlovski, V. V., Malevsky, D. A., Nikolaev, A. E., Levinshtein, M. E.

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Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes von Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.

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Radiation-stimulated photoluminescence in electron irradiated 4H-SiC von Lebedev, A A, Ber, B Ya, Seredova, N V, Kazantsev, D Yu, Kozlovski, V V

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Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC von Nikitina, Irina P., Seredova, Natalia. V., Lebedev, Sergey P., Zubov, Alexander V., Lebedev, Alexander A., Shakhov, Lev V., Kozlovski, Vitalii V.

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Impact of Proton Irradiation on Power 4H-SiC MOSFETs von Ivanov, Pavel A., Levinshtein, Mikhail E., Zubov, Alexander V., Lebedev, Alexander A., Fursin, Leonid, Strel'chuk, Anatoly M., Kozlovski, Vitalii V.

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Formation and annealing of vacancy-P complexes in proton-irradiated germanium von Elsayed, M., Arutyunov, N.Yu, Krause-Rehberg, R., Oganesyan, G.A., Kozlovski, V.V.

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Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons von Korolkov, O. M., Kozlovski, V. V., Lebedev, A. A., Sleptsuk, N., Toompuu, J., Rang, T.

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Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing von Korolkov, Oleg, Lebedev, Alexander A., Kozlovski, Vitalii V., Rang, Toomas, Sleptsuk, Natalja, Toompuu, Jana

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Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3 von Davydov, V. Yu, Smirnov, A. N., Eliseyev, I. A., Kitaev, Yu. E., Sharofidinov, S. S., Lebedev, A. A., Panov, D. Yu, Spiridonov, V. A., Bauman, D. A., Romanov, A. E., Kozlovski, V. V.

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Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs von Lebedev, A A, Kozlovski, V V, Levinshtein, M E, Ivanov, P A, Strel'chuk, A M, Zubov, A V, Fursin, Leonid

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Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies von Emtsev, V. V., Abrosimov, N. V., Kozlovski, V. V., Oganesyan, G. A., Poloskin, D. S.

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