Incremental resistance programming of programmable metallization cells for use as electronic synapses von Mahalanabis, D., Barnaby, H.J., Gonzalez-Velo, Y., Kozicki, M.N., Vrudhula, S., Dandamudi, P.

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Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells von Chen, W., Barnaby, H. J., Kozicki, M. N.

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New functionality of chalcogenide glasses for radiation sensing of nuclear wastes von Ailavajhala, M.S., Gonzalez-Velo, Y., Poweleit, C.D., Barnaby, H.J., Kozicki, M.N., Butt, D.P., Mitkova, M.

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Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells von Gonzalez-Velo, Y., Barnaby, H. J., Kozicki, M. N., Dandamudi, P., Chandran, A., Holbert, K. E., Mitkova, M., Ailavajhala, M.

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Sensors Based on Radiation-Induced Diffusion of Silver in Germanium Selenide Glasses von Dandamudi, Pradeep, Kozicki, M. N., Barnaby, H. J., Gonzalez-Velo, Y., Mitkova, M., Holbert, K. E., Ailavajhala, M., Yu, W.

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Silver incorporation in Ge–Se glasses used in programmable metallization cell devices von Mitkova, M, Kozicki, M.N

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Effects of Cobalt-60 Gamma-Rays on Ge-Se Chalcogenide Glasses and Ag/Ge-Se Test Structures von Gonzalez-Velo, Y., Barnaby, H. J., Chandran, A., Oleksy, D. R., Dandamudi, P., Kozicki, M. N., Holbert, K. E., Mitkova, M., Ailavajhala, M., Chen, P.

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Flexible Ag-ChG Radiation Sensors: Limit of Detection and Dynamic Range Optimization Through Physical Design Tuning von Mahmud, A., Gonzalez-Velo, Y., Saremi, M., Barnaby, H. J., Kozicki, M. N., Holbert, K. E., Mitkova, M., Alford, T. L., Goryll, M., Yu, W., Mahalanabis, D., Chen, W., Chamele, N., Taggart, J.

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Low current resistive switching in Cu–SiO2 cells von Schindler, C., Weides, M., Kozicki, M. N., Waser, R.

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Reversible migration of silver on memorized pathways in Ag-Ge40S60 films von Orava, J., Kozicki, M. N., Yannopoulos, S. N., Greer, A. L.

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Impact of TID on the Analog Conductance and Training Accuracy of CBRAM-Based Neural Accelerator von Apsangi, P., Chamele, N., Barnaby, H. J., Gonzalez-Velo, Y., Holbert, K. E., Kozicki, M. N.

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Thermal and photodiffusion of Ag in S-rich Ge–S amorphous films von Mitkova, M, Kozicki, M.N, Kim, H.C, Alford, T.L

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Nanoscale memory elements based on solid-state electrolytes von Kozicki, M.N., Mira Park, Mitkova, M.

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Low-Temperature Characterization of Cu-Cu:Silica-Based Programmable Metallization Cell von Chen, W., Chamele, N., Gonzalez-Velo, Y., Barnaby, H. J., Kozicki, M. N.

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Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer von Chen, W., Barnaby, H. J., Kozicki, M. N.

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Influence of Cu diffusion conditions on the switching of Cu-SiO2-based resistive memory devices von PUTHEN THERMADAM, S, BHAGAT, S. K, ALFORD, T. L, SAKAGUCHI, Y, KOZICKI, M. N, MITKOVA, M

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Local structure resulting from photo and thermal diffusion of Ag in Ge–Se thin films von Mitkova, M., Kozicki, M.N., Kim, H.C., Alford, T.L.

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Nanoscale phase separation in Ag–Ge–Se glasses von Kozicki, M.N, Mitkova, M, Zhu, J, Park, M

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In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment von Taggart, J. L., Chen, W., Gonzalez-Velo, Y., Barnaby, H. J., Holbert, K., Kozicki, M. N.

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Ionizing Radiation Effects on Nonvolatile Memory Properties of Programmable Metallization Cells von Taggart, J. L., Gonzalez-Velo, Y., Mahalanabis, D., Mahmud, A., Barnaby, H. J., Kozicki, M. N., Holbert, K. E., Mitkova, M., Wolf, K., Deionno, E., White, A. L.

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