The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers von Fathpour, S., Mi, Z., Bhattacharya, P., Kovsh, A. R., Mikhrin, S. S., Krestnikov, I. L., Kozhukhov, A. V., Ledentsov, N. N.

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High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser von Rafailov, E. U., Cataluna, M. A., Sibbett, W., Il’inskaya, N. D., Zadiranov, Yu. M., Zhukov, A. E., Ustinov, V. M., Livshits, D. A., Kovsh, A. R., Ledentsov, N. N.

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Submonolayer quantum dots for high speed surface emitting lasers von Ledentsov, Nn, Bimberg, D, Hopfer, F, Mutig, A, Shchukin, Va, Savel'ev, Av, Fiol, G, Stock, E, Eisele, H, Dähne, M, Gerthsen, D, Fischer, U, Litvinov, D, Rosenauer, A, Mikhrin, Ss, Kovsh, Ar, Zakharov, Nd, Werner, P

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35 GHz mode-locking of 1.3μm quantum dot lasers von Kuntz, M., Fiol, G., Lämmlin, M., Bimberg, D., Thompson, M. G., Tan, K. T., Marinelli, C., Penty, R. V., White, I. H., Ustinov, V. M., Zhukov, A. E., Shernyakov, Yu. M., Kovsh, A. R.

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Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers von Thompson, M. G., Rae, A., Sellin, R. L., Marinelli, C., Penty, R. V., White, I. H., Kovsh, A. R., Mikhrin, S. S., Livshits, D. A., Krestnikov, I. L.

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InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 mu m von Lott, J A, Ledentsov, N N, Ustinov, V M, Maleev, N A, Zhukov, A E, Kovsh, A R, Maximov, M V, Volovik, B V, Alferov, Zh I, Bimberg, D

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Quantum dot lasers: breakthrough in optoelectronics von Bimberg, D., Grundmann, M., Heinrichsdorff, F., Ledentsov, N.N., Ustinov, V.M., Zhukov, A.E., Kovsh, A.R., Maximov, M.V., Shernyakov, Y.M., Volovik, B.V., Tsatsul’nikov, A.F., Kop’ev, P.S., Alferov, Zh.I.

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InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm von Ustinov, V. M., Maleev, N. A., Zhukov, A. E., Kovsh, A. R., Egorov, A. Yu, Lunev, A. V., Volovik, B. V., Krestnikov, I. L., Musikhin, Yu. G., Bert, N. A., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D.

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InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain von Kovsh, A.R., Maleev, N.A., Zhukov, A.E., Mikhrin, S.S., Vasil’ev, A.P., Semenova, E.A., Shernyakov, Yu.M., Maximov, M.V., Livshits, D.A., Ustinov, V.M., Ledentsov, N.N., Bimberg, D., Alferov, Zh.I.

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InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with high (88%) differential efficiency von Kovsh, A R, Maleev, N A, Zhukov, A E, Mikhrin, S S, Vasil'ev, A P, Shernyakov, Yu M, Maximov, M V, Livshits, D A, Ustinov, V M, Alferov, Zh I, Ledentsov, N N, Bimberg, D

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Complete suppression of filamentation and superior beam quality in quantum-dot lasers von Ribbat, Ch, Sellin, R. L., Kaiander, I., Hopfer, F., Ledentsov, N. N., Bimberg, D., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Maximov, M. V.

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High performance narrow stripe quantum-dot lasers with etched waveguide von Ouyang, D, Ledentsov, N N, Bimberg, D, Kovsh, A R, Zhukov, A E, Mikhrin, S S, Ustinov, V M

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Hole and electron emission from InAs quantum dots von Kapteyn, C. M. A., Lion, M., Heitz, R., Bimberg, D., Brunkov, P. N., Volovik, B. V., Konnikov, S. G., Kovsh, A. R., Ustinov, V. M.

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Quantum dot VCSELs von Ustinov, Victor M., Maleev, Nikolai A., Kovsh, Alexey R., Zhukov, Alexey E.

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Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation von Maximov, M.V., Asryan, L.V., Shernyakov, Yu.M., Tsatsul'nikov, A.F., Kaiander, I.N., Nikolaev, V.V., Kovsh, A.R., Mikhrin, S.S., Ustinov, V.M., Zhukov, A.E., Alferov, Z.I., Ledenstou, N.N., Bimberg, D.

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Spectrotemporal response of 1.3 μm quantum-dot lasers von Kuntz, M., Ledentsov, N. N., Bimberg, D., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Shernyakov, Yu. M.

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Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates von Zhukov, A. E., Kovsh, A. R., Maleev, N. A., Mikhrin, S. S., Ustinov, V. M., Tsatsul’nikov, A. F., Maximov, M. V., Volovik, B. V., Bedarev, D. A., Shernyakov, Yu. M., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D.

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Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate von Zhukov, A.E., Kovsh, A.R., Ustinov, V.M., Shernyakov, Yu.M., Mikhrin, S.S., Maleev, N.A., Kondrat'eva, E.Yu, Livshits, D.A., Maximov, M.V., Volovik, B.V., Bedarev, D.A., Musikhin, Yu.G., Ledentsov, N.N., Kop'ev, P.S., Alferov, Z.I., Bimberg, D.

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Quantum dot semiconductor lasers with optical feedback von Huyet, G., O'Brien, D., Hegarty, S. P., McInerney, J. G., Uskov, A. V., Bimberg, D., Ribbat, C., Ustinov, V. M., Zhukov, A. E., Mikhrin, S. S., Kovsh, A. R., White, J. K., Hinzer, K., SpringThorpe, A. J.

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High-power 1.3 μ m InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system von Wilk, A., Kovsh, A.R., Mikhrin, S.S., Chaix, C., Novikov, I.I., Maximov, M.V., Shernyakov, Yu.M., Ustinov, V.M., Ledentsov, N.N.

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