Large-scalable graphene oxide films with resistive switching for non-volatile memory applications von Brzhezinskaya, M., Kapitanova, O.O., Kononenko, O.V., Koveshnikov, S., Korepanov, V., Roshchupkin, D.

Volltext

Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon von Bakhadyrkhanov, M. K., Kenzhaev, Z. T., Koveshnikov, S. V., Usmonov, A. A., Mavlonov, G. Kh

Volltext

Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon von Zikrillaev, N. F., Koveshnikov, S. V., Turekeev, Kh. S., Norkulov, N., Tachilin, S. A.

Volltext

Radiation Stability of Nickel Doped Solar Cells von Ismailov, K. A., Kenzhaev, Z. T., Koveshnikov, S. V., Kosbergenov, E. Zh, Ismaylov, B. K.

Volltext

Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion von Bakhadirkhanov, M. K., Iliev, Kh. M., Tursunov, M. O., Isamov, S. B., Koveshnikov, S. V., Majitov, M. Kh

Volltext

Composition of Silicon Alloyed with Gallium and Phosphorus Atoms von Zikrillaev, N. F., Koveshnikov, S. V., Turekeev, X. S., Ismailov, B. K.

Volltext

Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction von Bakhadyrkhanov, M. K., Isamov, S. B., Kenzhaev, Z. T., Koveshnikov, S. V.

Volltext

Erratum to: Composition of Silicon Alloyed with Gallium and Phosphorus Atoms von Zikrillaev, N. F., Koveshnikov, S. V., Turekeev, Kh. S., Ismaylov, B. K.

Volltext

Investigation of Low Energy Electron Irradiated SiO2 Based MOS Devices by Capacitance-Voltage and Thermally Stimulated Current Techniques von Aliasgari Renani, R., Soltanovich, O. A., Knyazev, M. A., Koveshnikov, S. V.

Volltext

Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm von Bakhadirkhanov, M. K., Isamov, S. B., Ibodullaev, Sh. N., Koveshnikov, S. V., Norkulov, N.

Volltext

Metal-oxide-semiconductor capacitors on GaAs with high- k gate oxide and amorphous silicon interface passivation layer von Koveshnikov, S., Tsai, W., Ok, I., Lee, J. C., Torkanov, V., Yakimov, M., Oktyabrsky, S.

Volltext

Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping von Kenzhaev, Z. T., Zikrillaev, N. F., Ayupov, K. S., Ismailov, K. A., Koveshnikov, S. V., Ismailov, T. B.

Volltext

An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms von Bakhadirkhanov, M. K., Ibodullaev, Sh. N., Zikrillaev, N. F., Koveshnikov, S. V.

Volltext

SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY von Zikrillaev, N. F., Koveshnikov, S. V., Isamov, S. B., Abdurahmonov, B. A., Kushiev, G. A.

Volltext

Codiffusion of Gallium and Phosphorus Atoms in Silicon von Zikrillaev, N. F., Isamov, S. B., Koveshnikov, S. V., Kenzhaev, Z. T., Turekeev, Kh. S.

Volltext

Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell von Kenzhaev, Z. T., Zikrillaev, N. F., Odzhaev, V. B., Ismailov, K. A., Prosolovich, V. S., Zikrillaev, Kh. F., Koveshnikov, S. V.

Volltext

Bipolar resistive switching in memristors based on Ge/Si(001) epitaxial layers von Gorshkov, O, Filatov, D, Koveshnikov, S, Shenina, M, Soltanovich, O, Shengurov, V, Denisov, S, Chalkov, V, Antonov, I, Pavlov, D, Vorontsov, V, Kruglov, A, Yakimov, E

Volltext

High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon von Oktyabrsky, S., Tokranov, V., Yakimov, M., Moore, R., Koveshnikov, S., Tsai, W., Zhu, F., Lee, J.C.

Volltext

Status and Development Prospects of Horse Breeding in the Altai Region von Zaycev, A M, Koveshnikov, V S

Volltext

Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide von Oktyabrsky, S., Tokranov, V., Koveshnikov, S., Yakimov, M., Kambhampati, R., Bakhru, H., Moore, R., Tsai, W.

Volltext