Emission of impurity-matrix dimer ions from AIIIBV semiconductors von Kazantsev, D. Yu, Kovarsky, A.P.

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Emission of impurity‐matrix dimer ions from A III B V semiconductors von Kazantsev, D. Yu, Kovarsky, A.P.

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Zinc determination in A 3B 5 semiconductors von Yu, Kazantsev D., Kovarsky, A.P.

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Properties of Si-Doped GaN Layers Grown by HVPE von Fomin, A.V., Nikolaev, A.E., Nikitina, I.P., Zubrilov, A.S., Mynbaeva, M.G., Kuznetsov, N.I., Kovarsky, A.P., Ber, B.Ja, Tsvetkov, D.V.

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Zinc determination in A3B5 semiconductors von Yu, Kazantsev D., Kovarsky, A.P.

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Caesium sputter ion source compatible with commercial SIMS instruments von Belykh, S.F., Palitsin, V.V., Veryovkin, I.V., Kovarsky, A.P., Chang, R.J.H., Adriaens, A., Dowsett, M., Adams, F.

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GaN p-n Structures Fabricated by Mg Ion Implantation von Kalinina, E.V., Solov’ev, V.A., Zubrilov, A.S., Dmitriev, V.A., Kovarsky, A.P.

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Direct determination of p/n junction depth by the emission of matrix complex ions von Alexandrov, O.V., Kazantsev, D.Yu, Kovarsky, A.P.

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Nonadditive sputtering of silicon by keV energy molecular projectiles of heavy and light elements von Belykh, S.F, Kovarsky, A.P, Palitsin, V.V, Adriaens, A, Adams, F

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Features of non-additive sputtering for various “molecular projectile–solid” systems von Belykh, S.F., Kovarsky, A.P., Palitsin, V.V., Adriaens, A., Adams, F.

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Determination of nitrogen in silicon carbide by secondary ion mass spectrometry von Ya Ber, B, Kazantsev, D.Yu, Kovarsky, A.P, Yafaev, R.R

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The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules von FOXON, C. T, HARRISON, I, NOVIKOV, S. V, LI, T, CAMPION, R. P, STADDON, C. R, DAVIS, C. S, WINSER, A. J, KOVARSKY, A. P, BER, B. Ja

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The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As 4 molecules von Foxon, C.T., Harrison, I., Novikov, S.V., Li, T., Campion, R.P., Staddon, C.R., Davis, C.S., Winser, A.J., Kovarsky, A.P., Ber, B.Ja

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The Influence of Arsenic Incorporation on the Optical Properties of As-doped GaN Films Grown by Molecular Beam Epitaxy Using Arsenic Tetramers von Novikov, S.V., Li, T., Winser, A.J., Foxon, C.T., Campion, R.P., Staddon, C.R., Davis, C.S., Harrison, I., Kovarsky, A.P., Ber, B.Ja

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Simultaneous diffusion of Zn and P in InGaAs and GaSb cells for solar and thermophotovoltaic space applications von Karlina, L.B., Ber, B.J., Kulagina, M.M., Kovarsky, A.P., Vargas-Aburto, C., Uribe, R.M., Brinker, D., Scheiman, D.

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Sensorless drive with synchronous machine and submersible inverter for oil-drowned pump von Makridenko, L.A., Sarichev, A.P., Portnoy, Yu.T., Raskin, L.Ya, Kovarsky, M.E., Vidumkin, E.M.

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