Determination of the Mn concentration in GaMnAs von Zhao, L X, Campion, R P, Fewster, P F, Martin, R W, Ber, B Ya, Kovarsky, A P, Staddon, C R, Wang, K Y, Edmonds, K W, Foxon, C T, Gallagher, B L

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Studies of copper-silver glass-metal nanocomposites von Sokolov, K. S., Zhurikhina, V. V., Kazantsev, D. Yu, Kovarsky, A. P.

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Determination of nitrogen in silicon carbide by secondary ion mass spectrometry von Ya Ber, B, Kazantsev, D.Yu, Kovarsky, A.P, Yafaev, R.R

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The Influence of Arsenic Incorporation on the Optical Properties of As-doped GaN Films Grown by Molecular Beam Epitaxy Using Arsenic Tetramers von Novikov, S.V., Li, T., Winser, A.J., Foxon, C.T., Campion, R.P., Staddon, C.R., Davis, C.S., Harrison, I., Kovarsky, A.P., Ber, B.Ja

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New Cs sputter ion source with polyatomic ion beams for secondary ion mass spectrometry applications von Belykh, S. F., Palitsin, V. V., Veryovkin, I. V., Kovarsky, A. P., Chang, R. J. H., Adriaens, A., Dowsett, M. G., Adams, F.

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Caesium sputter ion source compatible with commercial SIMS instruments von Belykh, S.F., Palitsin, V.V., Veryovkin, I.V., Kovarsky, A.P., Chang, R.J.H., Adriaens, A., Dowsett, M., Adams, F.

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The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules von FOXON, C. T, HARRISON, I, NOVIKOV, S. V, LI, T, CAMPION, R. P, STADDON, C. R, DAVIS, C. S, WINSER, A. J, KOVARSKY, A. P, BER, B. Ja

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Direct determination of p/n junction depth by the emission of matrix complex ions von Alexandrov, O.V., Kazantsev, D.Yu, Kovarsky, A.P.

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Direct SIMS Determination of the InxGa1-xN Mole Fraction von Kovarsky, A P, Kretser, Yu L, Kudriavtsev, Yu A, Stroganov, D N, Yagovkina, M A, Beierlein, Tilman, Strite, S

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Nonadditive sputtering of silicon by keV energy molecular projectiles of heavy and light elements von Belykh, S.F, Kovarsky, A.P, Palitsin, V.V, Adriaens, A, Adams, F

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Features of non-additive sputtering for various “molecular projectile–solid” systems von Belykh, S.F., Kovarsky, A.P., Palitsin, V.V., Adriaens, A., Adams, F.

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SIMS profiling of GaAs/δ-AlAs/GaAs/… heterostructures using polyatomic ionized oxygen clusters von Ber, B. Ya, Kovarsky, A. P., Kazantsev, D. Yu, Trushin, Yu. V., Zhurkin, E. E., Schmidt, A. A., Belykh, S. F.

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Properties of Si-Doped GaN Layers Grown by HVPE von Fomin, A.V., Nikolaev, A.E., Nikitina, I.P., Zubrilov, A.S., Mynbaeva, M.G., Kuznetsov, N.I., Kovarsky, A.P., Ber, B.Ja, Tsvetkov, D.V.

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Isotope-pure silicon layers grown by MBE von Godisov, O. N., Kaliteevsky, A. K., Safronov, A. Yu, Korolev, V. I., Ber, B. Ya, Davydov, V. Yu, Denisov, D. V., Kaliteevsky, M. A., Kop’ev, P. S., Kovarsky, A. P., Ustinov, V. M., Pohl, H. -J.

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Emission of impurity-matrix dimer ions from AIIIBV semiconductors von KAZANTSEV, D. Yu, KOVARSKY, A. P

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Zinc determination in A3B5 semiconductors von Yu, Kazantsev D., Kovarsky, A.P.

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A new Cs sputter ion source with polyatomic ion beams for SIMS applications von Belykh, S. F., Palitsin, V. V., Veryovkin, I. V., Kovarsky, A. P., Chang, R. J. H., Adriaens, A., Dowsett, M. G., Adams, F., Materials Science Division, Univ. Warwick, Ioffe Phys.-Tech. Inst, Ghent Univ, Univ. Antwerp

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GaN p-n Structures Fabricated by Mg Ion Implantation von Kalinina, E.V., Solov’ev, V.A., Zubrilov, A.S., Dmitriev, V.A., Kovarsky, A.P.

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Simultaneous diffusion of Zn and P in InGaAs and GaSb cells for solar and thermophotovoltaic space applications von Karlina, L.B., Ber, B.J., Kulagina, M.M., Kovarsky, A.P., Vargas-Aburto, C., Uribe, R.M., Brinker, D., Scheiman, D.

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Studies of copper―silver glass―metal nanocomposites von SOKOLOV, K. S, ZHURIKHINA, V. V, KAZANTSEV, D. Yu, KOVARSKY, A. P

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