Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT von Kouzminov, Dimitry, Cournoyer, James, Norasetthekul, Somchintana, Muthuraman, Harish, Gao, Qi

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Enable abrupt junction and advanced salicide formation with dynamic surface annealing von Sun, Shiyu, Muthukrishnan, Shankar, Ng, Ben, Nagy, Stephen, Zojaji, Alan, Lapena, Rubi, Kim, Yihwan, Rao, Vivek, Kouzminov, Dimitry, Variam, Naushad, Moffatt, Stephen, Brand, Adam

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Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies von Park, Hugh, Todorov, Stan, Colombeau, Benjamin, Rodier, Dennis, Kouzminov, Dimitry, Zou Wei, Guo Baonian, Khasgiwale, Niranjan, Decker-Lucke, Kurt

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Front- and back-end process characterization by SIMS to achieve electrically matched devices von BUDRI, Thanas, KOUZMINOV, Dimitry

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Front- and back-end process characterization by SIMS to achieve electrically matched devices von Budri, Thanas, Kouzminov, Dimitry

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MULTIPLE PLASMA ION SOURCE FOR INLINE SECONDARY ION MASS SPECTROMETRY von YANG, Ming Hong, KOUZMINOV, Dimitry, SRIVATSA, Arun Ramaswamy

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MULTIPLE PLASMA ION SOURCE FOR INLINE SECONDARY ION MASS SPECTROMETRY von YANG, Ming Hong, KOUZMINOV, Dimitry, SRIVATSA, Arun Ramaswamy

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Integration of millisecond and spike anneals for dopant activation optimization von Shiyu Sun, Sharma, Shashank, Rao, K. V., Ng, Ben, Kouzminov, Dimitry, Colombeau, Ben, Variam, Naushad, Muthukrishnan, Shankar, Mayur, Abhilash, Brand, Adam

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Comparison of indium metrology using LEXES and SIMS [semiconductor doping] von Kouzminov, D., Yupu Li, Hunter, J., Graoui, H., Al-Bayati, A., Foad, M., Staub, P., Hombourger, C., Schuhmacher, M.

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