Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys von Gallagher, J D, Senaratne, C L, Kouvetakis, J, Menéndez, J

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Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission von Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D. J., Kouvetakis, J., Menéndez, J.

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Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition von Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menéndez, J., Kouvetakis, J.

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Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n‑Type Doping Based on Custom-Designed Chemistries von Senaratne, C. L, Gallagher, J. D, Aoki, T, Kouvetakis, J, Menéndez, J

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Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties von Senaratne, C L, Gallagher, J D, Jiang, Liying, Aoki Toshihiro, Smith, D J, Menéndez, J, Kouvetakis, J

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Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in i... von Jiang, L, Gallagher, J D, Senaratne, C L, Aoki, T, Mathews, J, Kouvetakis, J, Menéndez, J

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Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap von Menéndez, J., Kouvetakis, J.

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TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon von Kouvetakis, J., Menendez, J., Chizmeshya, A.V.G.

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Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content von Ryu, Mee-Yi, Harris, Tom R., Yeo, Y. K., Beeler, R. T., Kouvetakis, J.

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Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes von Roucka, R., Mathews, J., Beeler, R. T., Tolle, J., Kouvetakis, J., Menéndez, J.

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Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes von Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J., Menéndez, J.

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Non-radiative recombination in Ge1−ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs von Gallagher, J D, Senaratne, C L, Xu C, Sims, P, Aoki, T, Smith, D J, Menéndez, J, Kouvetakis, J

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Ge1−x−ySixSny light emitting diodes on silicon for mid-infrared photonic applications von Gallagher, J D, Xu C, Senaratne, C L, Aoki, T, Wallace, P M, Kouvetakis, J, Menéndez, J

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Compositional dependence of the absorption edge and dark currents in Ge1?x?ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4 von Beeler, R T, Xu, Chi, Smith, D J, Grzybowski, G, Menendez, J, Kouvetakis, J

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Frustrated incomplete donor ionization in ultra-low resistivity germanium films von Xu, Chi, Senaratne, C. L., Kouvetakis, J., Menéndez, J.

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Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors von D'Costa, V.R., Fang, Y.-Y., Tolle, J., Kouvetakis, J., Menéndez, J.

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Ge–Sn semiconductors for band-gap and lattice engineering von Bauer, M., Taraci, J., Tolle, J., Chizmeshya, A. V. G., Zollner, S., Smith, David J., Menendez, J., Hu, Changwu, Kouvetakis, J.

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Room temperature emission spectroscopy of GeSn waveguides under optical pumping von Li, Z., Zhao, Y., Gallagher, J. D., Lombardo, D., Sarangan, A., Agha, Imad, Kouvetakis, J., Menéndez, J., Mathews, J.

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Electroluminescence from Ge1−ySny diodes with degenerate pn junctions von Gallagher, J D, Senaratne, C L, Wallace, P M, Menéndez, J, Kouvetakis, J

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Crystalline (Al1–x B x )PSi3 and (Al1–x B x )AsSi3 Tetrahedral Phases via Reactions of Al(BH4)3 and M(SiH3)3 (M = P, As) von Sims, Patrick, Aoki, Toshihiro, Favaro, Ruben, Wallace, Patrick, White, Andrew, Xu, Chi, Menendez, Jose, Kouvetakis, J

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