High Responsivity and Speed of 3D Graphene/InGaAs/InAs/InAlAs/Insb/InP HEMT Photodetector von Khaouani, M., Kourdi, Z.

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An improved perovskite solar cell employing InxGa1-xAs as an efficient hole transport layer von Khaouani, M., Bencherif, H., Kourdi, Z.

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120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector von Khaouani, M., Kourdi, Z., Djannati, Z., Taleb, S., Bencherif, H.

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Corrigendum to “120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector”[Opt. Mater. 148 (2024) 114846] von Khaouani, M., Kourdi, Z., Djannati, Z., Taleb, S., Bencherif, H.

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An ultra-sensitive AlGaN/AlN/GaN/AlGaN photodetector: Proposal and investigation von Khaouani, M., Hamdoune, A, Bencherif, H., Kourdi, Z., Dehimi, L.

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An ultrafast multi-layer Graphene/InGaAs/InAlAs/InAs P-I-N photodetector with 100 GHz bandwidth von Khaouani, M., Bencherif, H., Kourdi, Z., Dehimi, L., Hamdoune, A, Abdi, M.A.

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RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect von Khaouani, M., Bencherif, H., Hamdoune, A., Belarbi, A., Kourdi, Z.

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RF/analog Performance Assessment of High Frequency, Low Power In 0.3 Al 0.7As/InAs/InSb/In0.3 Al0.7 As HEMT Under High Temperature Effect von M. Khaouani, H. Bencherif, A. Hamdoune, A. Belarbi, Z. Kourdi

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Side effects in InAlN/GaN high electron mobility transistors von Kourdi, Z., Bouazza, B., Guen-Bouazza, A., Khaouani, M.

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Side effects in InAIN/GaN high electron mobility transistors von Kourdi, Z, Bouazza, B, Guen-Bouazza, A, Khaouani, M

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Exploring the Performance of CZTS Solar Cells Using BSF Layers von Kanoun, A.-A., Kourdi, Z., Merad, F., Rabah, M. A.

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Boosted Graphene/SiC MSM Photodetector Performance Using Genetic Algorithm Approach and Embedded Plasmonic Nanoparticles von Bencherif, H., Yousfi, A., Khouani, M., Meddour, A., Kourdi, Z.

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