PHYSICS OF SEMICONDUCTORS AND DIELECTRICS DETERMINATION OF THE PARAMETERS OF MULTI-CARRIER SPECTRUM IN CdHgTe. I. A REVIEW OF MOBILITY SPECTRUM ANALYSIS METHODS von Izhnin, I.I, Voitsekhovskii, A.V, Korotaev, A.G, Mynbaev, K.D

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Voitsekhovskii, A.V., Izhnin, I.I., Mynbaev, K.D., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, O.Yu, Savytskyy, H.V., Swiatek, Z., Morgiel, J.

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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air von Korotaev, A.G., Grigoryev, D.V., Voitsekhovskii, A.V., Lozovoy, K.A., Tarasenko, V.F., Ripenko, V.S., Shulepov, M.A., Erofeev, M.V., Yakushev, M.V., Dvoretskii, S.A., Mikhailov, N.N., Varavin, V.S.

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Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. II. Discrete Mobility Spectrum Analysis von Izhnin, I. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D.

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Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te von Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Fitsych, O.I., Swiatek, Z., Jakiela, R.

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Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te von Izhnin, I.I., Mynbaev, K.D., Swiatek, Z., Morgiel, J., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Marin, D.V., Yakushev, M.V., Fitsych, O.I., Bonchyk, O.Yu, Savytskyy, H.V.

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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis von Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Syvorotka, I.I., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Yakushev, M.V., Swiatek, Z., Morgiel, J., Bonchyk, O.Yu, Savytskyy, H.V.

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Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates von Izhnin, I.I., Voitsekhovsky, A.V., Korotaev, A.G., Fitsych, O.I., Bonchyk, A.Yu, Savytskyy, H.V., Mynbaev, K.D., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Jakiela, R.

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Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy von Bonchyk, O. Yu, Savytskyy, H. V., Izhnin, I. I., Mynbaev, K. D., Syvorotka, I. I., Korotaev, A. G., Voitsekhovskii, A. V., Fitsych, O. I., Varavin, V. S., Marin, D. V., Mikhailov, N. N., Yakushev, M. V., Swiatek, Z., Morgiel, J., Jakiela, R.

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TEM studies of structural defects in HgTe/HgCdTe quantum wells von Bonchyk, O. Yu, Savytskyy, H. V., Swiatek, Z., Morgiel, Y., Izhnin, I. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Fitsych, O. I., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V.

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Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE von Izhnin, I. I., Fitsych, O. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Kurbanov, K. R., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Remesnik, V. G., Yakushev, M. V., Bonchyk, O. Yu, Savytskyy, H. V., Świątek, Z., Morgiel, J.

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Background donor concentration in HgCdTe von Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Fitsych, O.I., Pociask−Bialy, M., Dvoretsky, S.A.

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Long-term stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching von Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, A.Yu, Savytskyy, H.V., Fitsych, O.I.

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DEFECTS IN ARSENIC IMPLANTED [p.sup.+]-n- AND [n.sup.+]-p-STRUCTURES BASED ON MBE GROWN CdHgTe FILMS von Izhnin, I.I, Fitsych, E.I, Voitsekhovskii, A.V, Korotaev, A.G, Mynbaev, K.D, Varavin, V.S, Dvoretsky, S.A, Mikhailov, N.N, Yakushev, M.V, Bonchyk, A.Yu, Savytskyy, H.V, Swiatek, Z

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Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy von Świątek, Z., Ozga, P., Izhnin, I. I., Fitsych, E. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V., Bonchyk, A. Yu, Savytsky, H. V.

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A change in the electro-physical properties of narrow-band CdHgTe solid solutions acted upon by a volume discharge induced by an avalanche electron beam in the air at atmospheric p... von Voitsekhovskii, A. V., Grigor’ev, D. V., Korotaev, A. G., Kokhanenko, A. P., Tarasenko, V. F., Shulepov, M. A.

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METHOD OF CONCENTRATING ELEMENTS-ADMIXTURES IN ANALYSIS OF HIGH PURITY SUBSTANCES von KARABASH A.G.,SU, BABINA F.L.,SU, ZABYTOVA A.V.,SU, KOROTAEV A.G.,SU, YUDINA T.A.,SU, PINCHUK G.P.,SU

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CHARACTERISTICS OF BLOOD PLASMA PROTEOME IN THE HEALTHY HUMAN DURING A YEAR-LONG WINTERING ON THE ANTARCTIC STATION «VOSTOK» UNDER THE CONDITIONS OF HYPOBARIC HYPOXIA AND HYPOCAPNI... von Larina, I.M., Kashirina, D.N., Pastushkova, L.Kh, Goncharova, A.G., Korotaev, K.S., Kononikhin, A.S., Brzhozovsky, A.G., Ilyin, E.A., Orlov, O.I.

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METAMORPHOSES OF INTRA-SYRIA NEGOTIATION PROCESS von ISAEV, L.M., KOROTAEV, A.V., MARDASOV, A.G.

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