Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement von Mikulics, M., Kordoš, P., Gregušová, D., Sofer, Z., Winden, A., Trellenkamp, St, Moers, J., Mayer, J., Hardtdegen, H.

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Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes von Mikulics, M., Arango, Y. C., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregušová, D., Novák, J., Kordoš, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., Hardtdegen, H.

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Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer von Mikulics, M, Kordoš, P, Gregušová, D, Gaži, Š, Novák, J, Sofer, Z, Mayer, J, Hardtdegen, H

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Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis von Stoklas, R., Gregušová, D., Novák, J., Vescan, A., Kordoš, P.

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Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors von Florovi, M, Stoklas, R, Ková, J, Kordoš, P

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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and densi... von Stoklas, R, Gregušová, D, Blaho, M, Fröhlich, K, Novák, J, Matys, M, Yatabe, Z, Kordoš, P, Hashizume, T

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Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor von Kordoš, P., Gregušová, D., Stoklas, R., Čičo, K., Novák, J.

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Trapped charge effects in AlGaN GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator von Stoklas, R, Gregušová, D, Hušeková, K, Marek, J, Kordoš, P

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Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements von Kordoš, P., Stoklas, R., Gregušová, D., Gaži, Š., Novák, J.

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Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate von Mikulics, M., Kordoš, P., Fox, A., Kočan, M., Lüth, H., Sofer, Z., Hardtdegen, H.

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High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors von Kordoš, P., Heidelberger, G., Bernát, J., Fox, A., Marso, M., Lüth, H.

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Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis von Kordoš, P., Donoval, D., Florovič, M., Kováč, J., Gregušová, D.

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Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition von Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., Novák, J.

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Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements von Kordoš, P., Stoklas, R., Gregušová, D., Hušeková, K., Carlin, J.-F., Grandjean, N.

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Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes von Donoval, D., Chvála, A., Šramatý, R., Kováč, J., Morvan, E., Dua, Ch, DiForte-Poisson, M. A., Kordoš, P.

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Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method von Kuzmik, J., Javorka, R., Alam, A., Marso, M., Heuken, M., Kordos, P.

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Reduction of skin effect losses in double-level-T-gate structure von Mikulics, M., Hardtdegen, H., Arango, Y. C., Adam, R., Fox, A., Grützmacher, D., Gregušová, D., Stanček, S., Novák, J., Kordoš, P., Sofer, Z., Juul, L., Marso, M.

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Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes von Donoval, D., Chvála, A., Šramatý, R., Kováč, J., Carlin, J.-F., Grandjean, N., Pozzovivo, G., Kuzmík, J., Pogany, D., Strasser, G., Kordoš, P.

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Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment von Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P.

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Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs von Marso, M., Heidelberger, G., Indlekofer, K.M., Bernat, J., Fox, A., Kordos, P., Luth, H.

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