Amorphous hafnium oxide thin films for antireflection optical coatings von Khoshman, J.M., Khan, A., Kordesch, M.E.

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Multiple oscillator models for the optical constants of polycrystalline zinc oxide thin films over a wide wavelength range von Khoshman, J.M., Hilfiker, J.N., Tabet, N., Kordesch, M.E.

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Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases von Zanatta, A. R., Ingram, D. C., Kordesch, M. E.

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Growth and surface characterization of magnetron sputtered zinc nitride thin films von Khoshman, J.M., Peica, N., Thomsen, C., Maultzsch, J., Bastek, B., Wan, C., Kordesch, M.E.

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Band-gap engineering in sputter-deposited ScxGa1−xN von Little, M. E., Kordesch, M. E.

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Cluster and Thickness Dependence of Ferromagnetism in Nickel In Situ-Doped Amorphous AlN Thin Films von Tanaka, H., Jadwisienczak, W. M., Kaya, S., Chen, G., Wan, C., Kordesch, M. E.

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On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon von Zanatta, A. R., Kordesch, M. E.

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Red–green–blue light emission and energy transfer processes in amorphous SiN films doped with Sm and Tb von Zanatta, A R, Khan, A, Kordesch, M E

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Ellipsometric study of a-Be3N2 thin films prepared by radio frequency magnetron sputtering von KHOSHMAN, J. M, JENNINGS, W. D, KORDESCH, M. E

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Optical conductivity tuning and electrical properties of a-BexZnyO thin films von Khoshman, J.M., Jakkala, P., Ingram, D.C., Kordesch, M.E.

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Atomistic origin of rapid crystallization of Ag-doped Ge-Sb-Te alloys: A joint experimental and theoretical study von Prasai, B., Kordesch, M. E., Drabold, D. A., Chen, G.

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Near-infrared optical constants and optical polarization properties of ZnO thin films von Khoshman, J.M., Manda, A.A., Kordesch, M.E.

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A mathematical model of solid-state dewetting of barium thin films on W (112) von Knavel, S.A., Savina, T.V., Mroz, M.V., Kordesch, M.E., Eads, C.N., Sadowski, J.T., Tenney, S.A.

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Band gap engineering in amorphous AlxGa1−xN: Experiment and ab initio calculations von Chen, Hong, Chen, Kuiying, Drabold, D. A., Kordesch, M. E.

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Optical characterization of sputtered amorphous aluminum nitride thin films by spectroscopic ellipsometry von Khoshman, Jebreel M., Kordesch, Martin E.

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Note: advancement in tip etching for preparation of tunable size scanning tunneling microscopy tips von Corbett, J P, Pandya, S G, Mandru, A-O, Pak, J, Kordesch, M E, Smith, A R

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Amorphous BeN as a new solid host for rare-earth-related luminescent materials von Zanatta, A. R., Richardson, H. H., Kordesch, M. E.

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Crystallinity studies of GaN/Si films grown at different temperatures by infrared reflectance spectroscopy von Ng, S.S., Hassan, Z., Hashim, M.R., Kordesch, M.E.

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Characteristics of low-temperature-grown GaN films on Si(111) von Hassan, Z., Lee, Y.C., Yam, F.K., Ibrahim, K., Kordesch, M.E., Halverson, W., Colter, P.C.

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Emission properties of an amorphous AlN:Cr3+ thin-film phosphor von Caldwell, M. L., Martin, A. L., Dimitrova, V. I., Van Patten, P. G., Kordesch, M. E., Richardson, H. H.

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