Generation of Dean vortices and enhancement of oxygen transfer rates in membrane contactors for different hollow fiber geometries von Kaufhold, D., Kopf, F., Wolff, C., Beutel, S., Hilterhaus, L., Hoffmann, M., Scheper, T., Schlüter, M., Liese, A.

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In-situ ballast condition assessment by tamping machine integrated measurement system von Barbir, O, Adam, D, Kopf, F, Pistrol, J, Antony, B, Auer, F

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Automated detection and quantification of the onset of undercoating corrosion using pulsed thermography von Kopf, Larissa F., Tighe, Rachael C.

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High-Speed Low-Loss Schottky-i-n InP-Based Optical Modulator for RF Photonics von Lin, J., Leven, A., Weimann, N.G., Yang, Y., Kopf, R.F., Reyes, R., Chen, Y.K.

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An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth von Weiner, J.S., Lee, J.S., Leven, A., Baeyens, Y., Houtsma, V., Georgiou, G., Yang Yang, Frackoviak, J., Tate, A., Reyes, R., Kopf, R.F., Wei-Jer Sung, Weimann, N.G., Young-Kai Chen

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SiGe differential transimpedance amplifier with 50-GHz bandwidth von Weiner, J.S., Leven, A., Houtsma, V., Baeyens, Y., Young-Kai Chen, Paschke, P., Yang Yang, Frackoviak, J., Wei-Jer Sung, Tate, A., Reyes, R., Kopf, R.F., Weimann, N.G.

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High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 V/sub pp/) output swing at 40 Gb/s von Baeyens, Y., Weimann, N., Roux, P., Leven, A., Houtsma, V., Kopf, R.F., Yang Yang, Frackoviak, J., Tate, A., Weiner, J.S., Paschke, P., Young-Kai Chen

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InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers von Baeyens, Y., Georgiou, G., Weiner, J.S., Leven, A., Houtsma, V., Paschke, P., Lee, Q., Kopf, R.F., Yang Yang, Chua, L., Chen, C., Liu, C.T., Young-Kai Chen

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Heavy tamping integrated dynamic compaction control von Adam, D., Brandl, H., Kopf, F., Paulmichl, I.

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A 6-b 12-GSamples/s track-and-hold amplifier in InP DHBT technology von Jaesik Lee, Leven, A., Weiner, J.S., Baeyens, Y., Yang Yang, Wei-Jer Sung, Frackoviak, J., Kopf, R.F., Young-Kai Chen

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Efficient Membrane Grating Couplers on InP von Long Chen, Liming Zhang, Doerr, Christopher R, Dupuis, Nicolas, Weimann, Nils G, Kopf, Rose F

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Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs von KOPF, R. F, HERMAN, M. H, LAMONT SCHNOES, M, PERLEY, A. P, LIVESCU, G, OHRING, M

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Self-heating of submicrometer InP-InGaAs DHBTs von Houtsma, V.E., Chen, J., Frackoviak, J., Hu, T., Kopf, R.F., Reyes, R.R., Tate, A., Yang, Y., Weimann, N.G., Chen, Y.K.

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Monitoring-based performance assessment of rail-bridge interaction based on structural reliability von Strauss, Alfred, Karimi, Saeed, Kopf, Fritz, Capraru, Catalin, Bergmeister, Konrad

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Beryllium δ doping of GaAs grown by molecular beam epitaxy von SCHUBERT, E. F, KUO, J. M, KOPF, R. F, LUFTMAN, H. S, HOPKINS, L. C, SAUER, N. J

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Elimination of heterojunction band discontinuities by modulation doping von SCHUBERT, E. F, TU, L. W, ZYDZIK, G. J, KOPF, R. F, BENVENUTI, A, PINTO, M. R

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Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability von KOPF, R. F, HAMM, R. A, RYAN, R. W, BURM, J, TATE, A, CHEN, Y.-K, GEORGIOU, G, LANG, D. V, REN, F

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Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors von REN, F, FULLOWAN, T. R, LOTHIAN, J, WISK, P. W, ABERNATHY, C. R, KOPF, R. F, EMERSON, A. B, DOWNEY, S. W, PEARTON, S. J

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Microscopic thickness variation of macroscopically uniform quantum wells von WARWICK, C. A, KOPF, R. F

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Room-temperature electroabsorption and switching in a Gaas/AlGaAs superlattice von BAR-JOSEPH, I, GOOSSEN, K. W, KUO, J. M, KOPF, R. F, MILLER, D. A. B, CHEMIA, D. S

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