Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures von Komkov, O S, Firsov, D D, Chernov, M Yu, Solov'ev, V A, Sitnikova, A A, Kop'ev, P S, Ivanov, S V

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Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range von Firsov, D D, Komkov, O S, Solov'ev, V A, Kop'ev, P S, Ivanov, S V

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Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux- and temperature-modulated techniques von Jmerik, Valentin N., Nechaev, Dmitrii V., Rouvimov, Sergey, Ratnikov, Valentin V., Kop'ev, Peter S., Rzheutski, Mikolai V., Lutsenko, Eugenii V., Yablonskii, Gennadii P., Aljohenii, Maher, Aljerwii, Abdulaziz, Alyamani, Ahmed, Ivanov, Sergey V.

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Mie resonances, infrared emission, and the band gap of InN von Shubina, T V, Ivanov, S V, Jmerik, V N, Solnyshkov, D D, Vekshin, V A, Kop'ev, P S, Vasson, A, Leymarie, J, Kavokin, A, Amano, H, Shimono, K, Kasic, A, Monemar, B

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Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring von Jmerik, V.N., Mizerov, A.M., Nechaev, D.V., Aseev, P.A., Sitnikova, A.A., Troshkov, S.I., Kop'ev, P.S., Ivanov, S.V.

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Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures von Gavrina, P S, Podoskin, A A, Fomin, E V, Veselov, D A, Shamakhov, V V, Slipchenko, S O, Pikhtin, N A, Kop'ev, P S

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Large blue shift of electroluminescence spectrum in nanoheterostructures with a deep AlSb/InAsSb/AlSb quantum well von Mikhailova, M. P., Ivanov, E. V., Danilov, L. V., Kalinina, K. V., Pivovarova, A. A., Yakovlev, Yu. P., Kop’ev, P. S.

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Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination von Danilov, L. V., Mikhailova, M. P., Ivanov, E. V., Yakovlev, Yu. P., Kop’ev, P. S.

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High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss von Slipchenko, S. O., Veselov, D. A., Zolotarev, V. V., Lyutetskii, A. V., Podoskin, A. A., Sokolova, Z. N., Shamakhov, V. V., Shashkin, I. S., Kop’ev, P. S., Pikhtin, N. A.

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Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review) von Mikhailova, M. P., Ivanov, E. V., Danilov, L. V., Kalinina, K. V., Yakovlev, Yu. P., Kop’ev, P. S.

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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence von Slipchenko, S. O., Podoskin, A. A., Nikolaev, D. N., Shamakhov, V. V., Shashkin, I. S., Kondratov, M. I., Gordeev, I. N., Grishin, A. E., Kazakova, A. E., Gavrina, P. S., Bakhvalov, K. V., Kop’ev, P. S., Pikhtin, N. A.

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Spontaneous ordering of arrays of coherent strained islands von Shchukin, VA, Ledentsov, NN, Kop'ev, PS, Bimberg, D

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High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design von Shashkin, I. S., Leshko, A. Yu, Shamakhov, V. V., Voronkova, N. V., Kapitonov, V. A., Bakhvalov, K. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide von Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Rudova, N. A., Bakhvalov, K. V., Lutetskiy, A. V., Kapitonov, V. A., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Output Optical Power Dynamics of Semiconductor Lasers (1070 nm) with a Few-Mode Lateral Waveguide of Mesa-Stripe Design at Ultrahigh Drive Currents von Shashkin, I. S., Leshko, A. Yu, Shamakhov, V. V., Romanovich, D. N., Kapitonov, V. A., Bakhvalov, K. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Near-Field Dynamics of Ultra-Wide-Aperture (800 μm) Diode Lasers Under Nanosecond Pulse Excitation von Slipchenko, Sergey O., Podoskin, Aleksandr A., Golovin, Vyacheslav S., Pikhtin, Nikita A., Kop'ev, Petr S.

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Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide von Shashkin, I. S., Leshko, A. Y., Nikolaev, D. N., Shamakhov, V. V., Veselov, D. A., Rudova, N. A., Bakhvalov, K. V., Zolotarev, V. V., Slipchenko, S. O., Pikhtin, N. A., Kop’ev, P. S.

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Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis von Golovin, V.S., Shashkin, I.S., Slipchenko, S.O., Pikhtin, N.A., Kop'ev, P.S.

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Tunnel-Coupled Laser Diode Microarray as a kW-Level 100-ns Pulsed Optical Power Source (λ = 910 nm) von Slipchenko, Sergey O., Podoskin, Aleksandr A., Veselov, Dmitrii A., Strelets, Vladislav A., Rudova, Natalia A., Pikhtin, Nikita A., Bagaev, Timur A., Ladugin, Maxim A., Marmalyuk, Alexander A., Kop'ev, Peter S.

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Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy von Mizerov, A.M., Jmerik, V.N., Yagovkina, M.A., Troshkov, S.I., Kop'ev, P.S., Ivanov, S.V.

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