Local anisotropic strain evaluation in thin Ge epitaxial film using SiGe stressor template grown on Ge substrate by selective ion implantation von Takeuchi, Kazuma, Yokogawa, Ryo, Ishihara, Seiya, Yamamoto, Shotaro, Konoshima, Shiori, Sawano, Kentarou, Ogura, Atsushi

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Formation of uniaxial strained Ge via control of dislocation alignment in Si/Ge heterostructures von Konoshima, Shiori, Yonekura, Eisuke, Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu, Sawano, Kentarou

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(Invited) Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering von Sawano, Kentarou, Xu, Xuejun, Konoshima, Shiori, Shitara, Nayuta, Ohno, Takeshi, Maruizumi, Takuya

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(Invited) Anisotropic Strain Introduction into Si/Ge Hetero Structures von Sawano, Kentarou, Konoshima, Shiori, Yamanaka, Junji, Arimoto, Keisuke, Nakagawa, Kiyokazu

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Formation of uniaxial strained Ge via control of dislocation alignment inSi/Ge heterostructures von Konoshima Shiori, Yonekura Eisuke, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Sawano Kentarou

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Detection of Strain Effect on Binding Energy of Ge 2p core level by HXPES with High Spatial Resolution von Sano, Ryousuke, Konoshima, Shiori, Takizawa, Kouhei, Sawano, Kentaro, Nohira, Hiroshi

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Evaluation of Anisotropic Stress State in Uniaxially Strained-Ge Fabricated by Selective Ion Implantation Technique von Yamamoto, Shotaro, Takeuchi, Kazuma, Kosemura, Daisuke, Konoshima, Shiori, Sawano, Kentarou, Ogura, Atsushi

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(Invited) Anisotropic Strain Introduction into Si/Ge Hetero Structures von Sawano, Kentarou, Konoshima, Shiori, Yamanaka, Junji, Arimoto, Keisuke, Nakagawa, Kiyokazu

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(Invited) Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering von Sawano, Kentarou, Xu, Xuejun, Konoshima, Shiori, Shitara, Nayuta, Ohno, Takeshi, Maruizumi, Takuya

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高空間分解能HXPESによるGe 2p内殻準位の結合エネルギーに歪みが与える影響の検出 von 佐野, 良介, 此島, 志織, 滝沢, 耕平, 澤野, 憲太郎, 野平, 博司

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選択的イオン注入法で作製した一軸性歪Geの異方性応力評価 von 山本, 章太郎, 武内, 一真, 小瀬村, 大亮, 此島, 詩織, 澤野, 憲太郎, 小椋, 厚志

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