3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology von Liu, Tingting, Kong, Yuechan, Wu, Lishu, Guo, Huaixin, Zhou, Jianjun, Kong, Cen, Chen, Tangsheng

Volltext

High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz von Yu, Xinxin, Zhou, Jianjun, Zhang, Song, Cao, Zhengyi, Kong, Yuechan, Chen, Tangsheng

Volltext

High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications von Zhang, Kai, Kong, Yuechan, Zhu, Guangrun, Zhou, Jianjun, Yu, Xinxin, Kong, Cen, Li, Zhonghui, Chen, Tangsheng

Volltext

Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition von Jia, Xin, Wei, Junjun, Huang, Yabo, Shao, Siwu, An, Kang, Kong, Yuechan, Liu, Jinglong, Chen, Liangxian, Li, Chengming

Volltext

Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3 von Chen, Zhihao, Yu, Xinxin, Zhou, Jianjun, Mao, Shuman, Fu, Yu, Yan, Bo, Xu, Ruimin, Kong, Yuechan, Chen, Tangsheng, Li, Yanrong, Xu, Yuehang

Volltext

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers von Guo, Huaixin, Li, Yizhuang, Yu, Xinxin, Zhou, Jianjun, Kong, Yuechan

Volltext

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions von Wu, Lishu, Dai, Jiayun, Kong, Yuechan, Chen, Tangsheng, Zhang, Tong

Volltext

High-performance enhancement-mode Al2O3/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology von Zhang, Kai, Kong, Cen, Zhou, Jianjun, Kong, Yuechan, Chen, Tangsheng

Volltext

Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs von Yi Li, Yaxiong Guo, Kai Zhang, Xuming Zou, Jingli Wang, Yuechan Kong, Tangsheng Chen, Changzhong Jiang, Guojia Fang, Chuansheng Liu, Lei Liao

Volltext

High-efficiency non-ideal quarter-wavelength Bragg reflection waveguide for photon-pair generation von Niu, Bin, Jing, Xu, Qian, Cheng, Wang, Chenquan, Kong, Yuechan, Chen, Tangsheng, Lu, Liangliang

Volltext

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric von Gao, Tao, Xu, Ruimin, Kong, Yuechan, Zhou, Jianjun, Kong, Cen, Dong, Xun, Chen, Tangsheng

Volltext

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate von Jia, Xin, Wei, Jun‐jun, Kong, Yuechan, Li, Cheng‐ming, Liu, Jinlong, Chen, Liangxian, Sun, Fangyuan, Wang, Xinwei

Volltext

Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs von Kong, Yuechan, Zhou, Jianjun, Kong, Cen, Zhang, Youtao, Dong, Xun, Lu, Haiyan, Chen, Tangsheng, Yang, Naibin

Volltext

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz von Yu, Xinxin, Hu, Wenxiao, Zhou, Jianjun, Liu, Bin, Tao, Tao, Kong, Yuechan, Chen, Tangsheng, Zheng, Youdou

Volltext

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier von Wang, Wen, Yu, Xinxin, Zhou, Jianjun, Chen, Dunjun, Zhang, Kai, Kong, Cen, Kong, Yuechan, Li, Zhonghui, Chen, Tangsheng

Volltext

Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates von Qi, Yongle, Wang, Denggui, Zhou, Jianjun, Zhang, Kai, Kong, Yuechan, Wu, Suzhen, Chen, Tangsheng

Volltext

A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD von Fu, Yu, Xu, Ruimin, Zhou, Jianjun, Yu, Xinxin, Wen, Zhang, Kong, Yuechan, Chen, Tangsheng, Zhang, Yong, Yan, Bo, He, Jijun, Xu, Yuehang

Volltext

Thermal simulation of high power GaN-on-diamond substrates for HEMT applications von Guo, Huaixin, Kong, Yuechan, Chen, Tangsheng

Volltext

Responsibility optimization of a high-speed InP/InGaAs photodetector with a back reflector structure von Wang, Yuxuan, Li, Guanyu, Gu, Xiaowen, Kong, Yuechan, Zheng, Youdou, Shi, Yi

Volltext

A 220 GHz GaN‐based monolithic integrated frequency doubler delivering over 0.25W output power von Zheng, Yiyuan, Zhang, Kai, Dai, Kunpeng, Guo, Huaixin, Qian, Jun, Kong, Yuechan, Chen, Tangsheng

Volltext